POLISHING LIQUID FOR SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SEMICONDUCTOR WAFER

WIPO Patent Application WO/2011/158718

A1

Disclosed is a polishing liquid for a semiconductor substrate, which contains modified silica particles the surfaces of which are modified by an aluminate, a water-soluble polymer and water. The content of the water-soluble polymer is more than 0% by mass but 1.00% by mass or less based on the total mass of the polishing liquid for a semiconductor substrate, and the polishing liquid has a pH of 5.0-9.0 (inclusive). Also disclosed is a method for producing a semiconductor wafer, which comprises a polishing step wherein the surface of a semiconductor substrate is polished using the polishing liquid for a semiconductor substrate so as to obtain a semiconductor wafer.

NOMURA Yutaka (13-1, Higashi-cho 4-chome, Hitachi-sh, Ibaraki 55, 〒3178555, JP)
野村　豊 (〒55 茨城県日立市東町四丁目１３番１号　日立化成工業株式会社内 Ibaraki, 〒3178555, JP)
NAKAGAWA Hiroshi (13-1, Higashi-cho 4-chome, Hitachi-sh, Ibaraki 55, 〒3178555, JP)

JP2011/063171

December 22, 2011

June 08, 2011

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HITACHI CHEMICAL COMPANY, LTD. (1-1 Nishi-Shinjuku 2-chome, Shinjuku-ku Tokyo, 49, 〒1630449, JP)
日立化成工業株式会社 (〒49 東京都新宿区西新宿二丁目１番１号 Tokyo, 〒1630449, JP)
NOMURA Yutaka (13-1, Higashi-cho 4-chome, Hitachi-sh, Ibaraki 55, 〒3178555, JP)
野村　豊 (〒55 茨城県日立市東町四丁目１３番１号　日立化成工業株式会社内 Ibaraki, 〒3178555, JP)

H01L21/304; B24B37/00; C09K3/14

HASEGAWA Yoshiki et al. (SOEI PATENT AND LAW FIRM, Marunouchi MY PLAZA 9th fl. 1-1, Marunouchi 2-chome, Chiyoda-k, Tokyo 05, 〒1000005, JP)

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