Title:
POLISHING METHOD AND POLISHING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2007/063873
Kind Code:
A1
Abstract:
Provided is a polishing apparatus which can polish hard-to-process material, such
as SiC, at a high efficiency, into a high quality plane. The polishing apparatus is
provided with a bell jar (20) filled with a gas including oxygen at a pressure higher
than the atmospheric pressure; a pad (22) which relatively moves in contact with
a processing object (25) in the bell jar (20) and polishes the processing object;
slurry supplying means (31, 24) for supplying a pad surface in contact with the
processing object with a slurry including a photocatalyst; and an ultraviolet light
source (35) for irradiating inside the bell jar with ultraviolet. The photocatalyst included
in the slurry generates active oxygen by receiving ultraviolet irradiation in
the bell jar filled with the high pressure gas including oxygen. Since the active oxygen
weakens (or cuts) the strong atomic bond of the processing object, polishing efficiency
of pad is improved. Even when the hard-to-process material, such as SiC, is to
be processed, highly efficient and high quality polishing is performed.
Inventors:
DOI TOSHIRO (JP)
WATANABE SHIGERU (JP)
WATANABE SHIGERU (JP)
Application Number:
PCT/JP2006/323774
Publication Date:
June 07, 2007
Filing Date:
November 29, 2006
Export Citation:
Assignee:
NAT UNIVERSITY CORP SAITAMA UN (JP)
DOI TOSHIRO (JP)
WATANABE SHIGERU (JP)
DOI TOSHIRO (JP)
WATANABE SHIGERU (JP)
International Classes:
B24B1/00; B24B37/00; H01L21/304
Domestic Patent References:
WO1999061540A1 | 1999-12-02 |
Foreign References:
JP2003225859A | 2003-08-12 | |||
JP2002219635A | 2002-08-06 | |||
JP2006224252A | 2006-08-31 |
Attorney, Agent or Firm:
OHASHI, Koji (Omorikopobianezu#504 16-12, Minamioi 6-chom, Sinagawa-ku Tokyo 13, JP)
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