Title:
POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2019/012949
Kind Code:
A1
Abstract:
The present invention pertains to a polishing method for performing polishing by sliding, with respect to an abrasive cloth attached to a surface plate, a semiconductor silicon wafer held by a polishing head while an abrading agent is being supplied, wherein: in the course of sequentially performing primary polishing, secondary polishing, and final polishing on the semiconductor silicon wafer, the secondary polishing comprises polishing with an alkali-based abrading agent that contains loose grains but does not contain a water-soluble polymer agent and a subsequently-performed rinse-polishing using an abrading agent that contains a water-soluble polymer agent; the rinse-polishing comprises two steps of polishing; and after performing the first step of rinse-polishing while supplying the abrading agent containing the water-soluble polymer agent, the second step of rinse-polishing is performed by switching the abrading agent to an abrading agent that contains a water-soluble polymer agent having a greater average molecular weight than that used in the first step and by supplying said abrading agent. With this configuration, the present invention is able to provide a polishing method that results in a semiconductor silicon wafer exhibiting few minor defects on the wafer surface, few DIC defects, and a preferable surface roughness.
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Inventors:
AOKI KAZUAKI (JP)
Application Number:
PCT/JP2018/023760
Publication Date:
January 17, 2019
Filing Date:
June 22, 2018
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
International Classes:
H01L21/304; B24B37/00; C09K3/14
Foreign References:
| JP2005303060A | 2005-10-27 | |||
| JP2015159259A | 2015-09-03 | |||
| JP2016001705A | 2016-01-07 | |||
| JP2016004953A | 2016-01-12 | |||
| JP2016039179A | 2016-03-22 | |||
| JP2015198112A | 2015-11-09 |
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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