Title:
POLISHING SLURRY AND POLISHING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2011/125254
Kind Code:
A1
Abstract:
In order to provide a polishing technique by which a silicon carbide that is difficult to polish can be polished with high efficiency and high surface precision, a polishing slurry for polishing substrates is characterized in that the abrasive particles have a manganese oxide as the main component, and the content of the abrasive particles is less than 10 wt% of the polishing slurry. The pH of the polishing slurry is preferably 7 or higher, and it is particularly preferable to use a manganese dioxide as the abrasive particles. In addition, the polishing slurry is suitable for silicon carbide substrates.
More Like This:
Inventors:
YAMAGUCHI, Yasuhide (LTD. Engineered Materials Sector Rare Metals Division 1-11-1, Osaki, Shinagawa-k, Tokyo 84, 〒1418584, JP)
山口 靖英 (〒84 東京都品川区大崎一丁目１１番１号 三井金属鉱業株式会社 機能材料事業本部 レアメタル事業部内 Tokyo, 〒1418584, JP)
山口 靖英 (〒84 東京都品川区大崎一丁目１１番１号 三井金属鉱業株式会社 機能材料事業本部 レアメタル事業部内 Tokyo, 〒1418584, JP)
Application Number:
JP2010/070795
Publication Date:
October 13, 2011
Filing Date:
November 22, 2010
Export Citation:
Assignee:
MITSUI MINING & SMELTING CO.,LTD. (1-11-1, Osaki Shinagawa-k, Tokyo 84, 〒1418584, JP)
三井金属鉱業株式会社 (〒84 東京都品川区大崎一丁目１１番１号 Tokyo, 〒1418584, JP)
YAMAGUCHI, Yasuhide (LTD. Engineered Materials Sector Rare Metals Division 1-11-1, Osaki, Shinagawa-k, Tokyo 84, 〒1418584, JP)
三井金属鉱業株式会社 (〒84 東京都品川区大崎一丁目１１番１号 Tokyo, 〒1418584, JP)
YAMAGUCHI, Yasuhide (LTD. Engineered Materials Sector Rare Metals Division 1-11-1, Osaki, Shinagawa-k, Tokyo 84, 〒1418584, JP)
International Classes:
B24B37/00; C09K3/14; H01L21/304
Attorney, Agent or Firm:
TANAKA AND OKAZAKI (Hongo K&K Bldg, 30-10 Hongo 3-chome, Bunkyo-k, Tokyo 33, 〒1130033, JP)
Download PDF:
Claims: