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Title:
POLISHING SLURRY AND POLISHING METHOD USING SAME
Document Type and Number:
WIPO Patent Application WO/2011/158522
Kind Code:
A1
Abstract:
Disclosed is a polishing treatment technology that uses polishing particles consisting of manganese oxide and exhibits polishing characteristics equivalent to those of cerium oxide: namely, good polishing speed and polishing-surface precision. The disclosed polishing slurry for polishing substrates is characterized by polishing particles that consist primarily of manganese(III) oxide and constitute less than 10% of the weight of the polishing slurry. The polishing slurry is further characterized by a pH of at least 4. This polishing slurry can maintain a polishing speed and polishing-surface precision at least equivalent to those exhibited by cerium oxide.

Inventors:
YAMAGUCHI, Yasuhide (Engineered Materials Sector Rare Metals Division, 1-11-1, Osaki, Shinagawa-k, Tokyo 84, 〒1418584, JP)
山口 靖英 (〒84 東京都品川区大崎一丁目11番1号 三井金属鉱業株式会社 機能材料事業本部 レアメタル事業部内 Tokyo, 〒1418584, JP)
Application Number:
JP2011/050632
Publication Date:
December 22, 2011
Filing Date:
January 17, 2011
Export Citation:
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Assignee:
MITSUI MINING & SMELTING CO.,LTD. (1-11-1, Osaki Shinagawa-k, Tokyo 84, 〒1418584, JP)
三井金属鉱業株式会社 (〒84 東京都品川区大崎一丁目11番1号 Tokyo, 〒1418584, JP)
YAMAGUCHI, Yasuhide (Engineered Materials Sector Rare Metals Division, 1-11-1, Osaki, Shinagawa-k, Tokyo 84, 〒1418584, JP)
International Classes:
B24B37/00; C09K3/14
Attorney, Agent or Firm:
TANAKA AND OKAZAKI (Hongo K&K Bldg, 30-10 Hongo 3-chome, Bunkyo-k, Tokyo 33, 〒1130033, JP)
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Claims: