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Patent Searching and Data


Title:
POLISHING SLURRY AND POLISHING METHOD USING SAME
Document Type and Number:
WIPO Patent Application WO/2011/158522
Kind Code:
A1
Abstract:
Disclosed is a polishing treatment technology that uses polishing particles consisting of manganese oxide and exhibits polishing characteristics equivalent to those of cerium oxide: namely, good polishing speed and polishing-surface precision. The disclosed polishing slurry for polishing substrates is characterized by polishing particles that consist primarily of manganese(III) oxide and constitute less than 10% of the weight of the polishing slurry. The polishing slurry is further characterized by a pH of at least 4. This polishing slurry can maintain a polishing speed and polishing-surface precision at least equivalent to those exhibited by cerium oxide.

Inventors:
YAMAGUCHI YASUHIDE (JP)
HORIUCHI MIKIMASA (JP)
Application Number:
PCT/JP2011/050632
Publication Date:
December 22, 2011
Filing Date:
January 17, 2011
Export Citation:
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Assignee:
MITSUI MINING & SMELTING CO (JP)
YAMAGUCHI YASUHIDE (JP)
HORIUCHI MIKIMASA (JP)
International Classes:
B24B37/00; C09K3/14
Foreign References:
JP2000349052A2000-12-15
JPH10180619A1998-07-07
JP2002166354A2002-06-11
Attorney, Agent or Firm:
TANAKA AND OKAZAKI (JP)
Patent business corporation Tanaka and Okazaki and associates (JP)
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Claims: