Title:
POLISHING SLURRY FOR SUBTLE SURFACE PLANARIZATION AND ITS USING METHOD
Document Type and Number:
WIPO Patent Application WO/2007/137508
Kind Code:
A1
Abstract:
A polishing slurry for subtle surface planarization and its using method are disclosed. The present polishing slurry for subtle surface planarization includes abrasive and water, it is characterized in that the abrasive is a colloidal Al-doped silica abrasive, this colloidal Al-doped silica abrasive is an aqueous dispersion of Al-doped silica. When using the present polishing slurry for subtle surface planarization in CMP process, the downward pressure is 0.5-3psi. The present polishing slurry for subtle surface –planarization can effectively polish Ta, TaN, TEOS, FSG, BD or other lower dielectric material and so on, and the polishing rate for lower dielectric material can be increased by two times, while excellent planarization effect can be obtained.
Inventors:
CHEN JERY GUODONG (CN)
WANG SHUMIN (CN)
YU CHRIS CHANG (CN)
SONG PETER WEIHONG (CN)
GU YUAN (CN)
WANG SHUMIN (CN)
YU CHRIS CHANG (CN)
SONG PETER WEIHONG (CN)
GU YUAN (CN)
Application Number:
PCT/CN2007/001696
Publication Date:
December 06, 2007
Filing Date:
May 24, 2007
Export Citation:
Assignee:
ANJI MICROELECTRONICS SHANGHAI (CN)
CHEN JERY GUODONG (CN)
WANG SHUMIN (CN)
YU CHRIS CHANG (CN)
SONG PETER WEIHONG (CN)
GU YUAN (CN)
CHEN JERY GUODONG (CN)
WANG SHUMIN (CN)
YU CHRIS CHANG (CN)
SONG PETER WEIHONG (CN)
GU YUAN (CN)
International Classes:
C09G1/02; C09K3/14; H01L21/304
Domestic Patent References:
| WO2006028759A2 | 2006-03-16 |
Foreign References:
| US7022255B2 | 2006-04-04 | |||
| US6893476B2 | 2005-05-17 | |||
| US20050234136A1 | 2005-10-20 |
Attorney, Agent or Firm:
ZHENGHAN LAW FIRM (South Tower of Shanghai Stock Exchange BuildingN?528 Pu Dong Road S, hanghai 0, CN)
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