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Title:
POLISHING SOLUTION FOR CHEMICAL MECHANICAL POLISHING (CMP), STOCK SOLUTION, AND POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2014/065029
Kind Code:
A1
Abstract:
This CMP polishing solution for polishing a substrate including an aluminium-based material includes abrasive grains, an oxidant, and a liquid medium. The circularity of the abrasive grains is not more than 0.90. The pH of the CMP polishing solution is not more than 11.5.

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Inventors:
INOUE KEISUKE (JP)
ONO HIROSHI (JP)
HOSAKA DAISUKE (JP)
Application Number:
PCT/JP2013/074132
Publication Date:
May 01, 2014
Filing Date:
September 06, 2013
Export Citation:
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Assignee:
HITACHI CHEMICAL CO LTD (JP)
International Classes:
C09K3/14; B24B37/00; C09G1/02
Domestic Patent References:
WO2012102187A12012-08-02
Foreign References:
JP2009091197A2009-04-30
JP2008169102A2008-07-24
JP2009144080A2009-07-02
JP2011131346A2011-07-07
JP2010170649A2010-08-05
JP2008093819A2008-04-24
JP2012104800A2012-05-31
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
Yoshiki Hasegawa (JP)
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