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Patent Searching and Data


Title:
POLISHING SOLUTION AND CHEMICAL-MECHANICAL POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2020/255602
Kind Code:
A1
Abstract:
The present invention provides a polishing solution that, when employed for CMP of an article to be polished that has a cobalt-containing film, hinders the occurrence of dishing on the surface to be polished of the polished article and allows polishing to be performed rapidly, said solution making it possible for high-reliability semiconductor products to be manufactured. Also provided is a chemical-mechanical polishing method using the polishing solution. This polishing solution is used in chemical-mechanical polishing of an object to be polished having a cobalt-containing film, wherein the polishing solution contains colloidal silica, one or more specific compounds selected from the group consisting of glycine, alanine, sarcosine, and iminodiacetic acid, a passivation-film-forming agent, hydrogen peroxide, sodium, and ammonia, the mass ratio of the ammonia content to the sodium content is 1×103-1×106, and the pH is 5.5-8.0.

Inventors:
KAMIMURA TETSUYA (JP)
Application Number:
JP2020/019606
Publication Date:
December 24, 2020
Filing Date:
May 18, 2020
Export Citation:
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Assignee:
FUJIFILM CORP (JP)
International Classes:
C09K3/14; B24B37/00; H01L21/304
Attorney, Agent or Firm:
ITOH Hideaki et al. (JP)
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