POLISHING SOLUTION FOR CMP, AND METHOD FOR POLISHING SUBSTRATE USING THE POLISHING SOLUTION FOR CMP

WIPO Patent Application WO/2010/016390

A1

Disclosed is a polishing solution for CMP, which comprises 1,2,4-triazole, a phosphoric acid component, an oxidizing agent and abrasive grains.  Also disclosed is a method for polishing a substrate, which comprises polishing the substrate with a polishing cloth while supplying a polishing solution for CMP between the substrate and the polishing cloth, wherein the substrate has a palladium layer and the polishing solution for CMP comprises 1,2,4-triazole, a phosphoric acid component, an oxidizing agent and abrasive grains.

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MINAMI Hisataka (13-1, Higashi-cho 4-chome, Hitachi-sh, Ibaraki 55, 〒3178555, JP)
南　久貴 (〒55 茨城県日立市東町四丁目１３番１号　日立化成工業株式会社内 Ibaraki, 〒3178555, JP)
SAISYO Ryouta (13-1, Higashi-cho 4-chome, Hitachi-sh, Ibaraki 55, 〒3178555, JP)

JP2009/063172

February 11, 2010

July 23, 2009

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HITACHI CHEMICAL COMPANY, LTD. (1-1 Nishi-Shinjuku 2-chome, Shinjuku-ku Tokyo, 49, 〒1630449, JP)
日立化成工業株式会社 (〒49 東京都新宿区西新宿二丁目１番１号 Tokyo, 〒1630449, JP)
MINAMI Hisataka (13-1, Higashi-cho 4-chome, Hitachi-sh, Ibaraki 55, 〒3178555, JP)
南　久貴 (〒55 茨城県日立市東町四丁目１３番１号　日立化成工業株式会社内 Ibaraki, 〒3178555, JP)

H01L21/304; B24B37/04; C09K3/14; H01L21/3205; H01L23/52

HASEGAWA Yoshiki et al. (SOEI PATENT AND LAW FIRM, Ginza First Bldg. 10-6, Ginza 1-chome, Chuo-k, Tokyo 61, 〒1040061, JP)

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