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Title:
POLISHING SOLUTION FOR CMP AND POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2011/021599
Kind Code:
A1
Abstract:
A polishing solution for CMP includes a medium and silica particles as abrasive grains dispersed in the medium. The polishing solution for CMP satisfies the following conditions: (A1) the silica particles have a silanol group density of 5.0 groups/nm2 or less; (B1) when arbitrary 20 particles are selected from an image obtained by observing the silica particles by a scanning electronic microscope, the particles have a two-axis average primary particle diameter of 25 to 55 nm; and (C1) the silica particles have an association degree of 1.1 or more. This provides a polishing solution for CMP having a high polishing speed to a barrier film, good dispersion stability of abrasive grains, and a high polishing speed to an interlayer insulating film and a polishing method in manufacturing, for example, a semiconductor substrate excellent in reduction in size, reduction in thickness, dimensional accuracy, and electric characteristics and having a high reliability and low cost.

Inventors:
KANAMARU, Mamiko (13-1, Higashi-cho 4-chome, Hitachi-sh, Ibaraki 55, 〒3178555, JP)
金丸 真美子 (〒55 茨城県日立市東町四丁目13番1号 日立化成工業株式会社内 Ibaraki, 〒3178555, JP)
SHIMADA, Tomokazu (13-1, Higashi-cho 4-chome, Hitachi-sh, Ibaraki 55, 〒3178555, JP)
Application Number:
JP2010/063811
Publication Date:
February 24, 2011
Filing Date:
August 16, 2010
Export Citation:
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Assignee:
HITACHI CHEMICAL COMPANY, LTD. (1-1 Nishishinjuku 2-chome, Shinjuku-ku Tokyo, 49, 〒1630449, JP)
日立化成工業株式会社 (〒49 東京都新宿区西新宿二丁目1番1号 Tokyo, 〒1630449, JP)
KANAMARU, Mamiko (13-1, Higashi-cho 4-chome, Hitachi-sh, Ibaraki 55, 〒3178555, JP)
金丸 真美子 (〒55 茨城県日立市東町四丁目13番1号 日立化成工業株式会社内 Ibaraki, 〒3178555, JP)
International Classes:
H01L21/304; B24B37/00; C09K3/14
Attorney, Agent or Firm:
MIYOSHI, Hidekazu et al. (Toranomon Kotohira Tower, 2-8 Toranomon 1-chome, Minato-k, Tokyo 01, 〒1050001, JP)
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