Title:
POLISHING SOLUTION, DISPERSION, POLISHING SOLUTION PRODUCTION METHOD, AND POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2020/246471
Kind Code:
A1
Abstract:
This polishing solution for CMP contains a liquid medium and abrasive grains containing silica, wherein the contained amount of the abrasive grains with respect to the total amount of the polishing solution is 1.0 mass% or more, and, in a mass-based particle size distribution obtained through a centrifuge separation method, the D50 of the abrasive grains is not more than 150 nm and the D90 of the abrasive grains is not less than 100 nm, and the difference between D90 and D50 is 21 nm or more.
Inventors:
INOUE KEISUKE (JP)
ONO HIROSHI (JP)
ONO HIROSHI (JP)
Application Number:
PCT/JP2020/021800
Publication Date:
December 10, 2020
Filing Date:
June 02, 2020
Export Citation:
Assignee:
SHOWA DENKO MATERIALS CO LTD (JP)
International Classes:
C09K3/14; C09G1/02; H01L21/304
Domestic Patent References:
| WO2012036087A1 | 2012-03-22 |
Foreign References:
| US20190127607A1 | 2019-05-02 | |||
| JP2017190450A | 2017-10-19 | |||
| JP2014018923A | 2014-02-03 | |||
| US20040162006A1 | 2004-08-19 | |||
| CN102533123A | 2012-07-04 | |||
| JP2001323254A | 2001-11-22 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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