BACKGROUND

Field

[0001] Embodiments herein generally relate to electronic device manufacturing, and in particular, to chemical mechanical polishing (CMP) systems and methods used in a semiconductor device manufacturing process.

Description of the Related Art

[0002] Chemical mechanical polishing (CMP) is commonly used in the manufacturing of high-density integrated circuits to planarize or polish a layer of material deposited on a substrate. One common application of a CMP process in semiconductor device manufacturing is planarization of a bulk film, for example premetal dielectric (PMD) or interlayer dielectric (ILD) polishing, where underlying two or three-dimensional features create recesses and protrusions in the surface of the to be planarized material surface. Other common applications include shallow trench isolation (STI) and interlayer metal interconnect formation, where the CMP process is used to remove the via, contact or trench fill material (overburden) from the exposed surface (field) of the layer of material having the STI or metal interconnect features disposed therein.

[0003] In a typical CMP process, a polishing pad is mounted to a rotatable polishing platen and a material surface of a substrate is urged against the polishing pad using a rotatable substrate carrier in the presence of a polishing fluid. Material is removed across the surface of the substrate in contact with the polishing pad through a combination of chemical and mechanical activity. The chemical and mechanical activity is provided by the polishing fluid, a relative motion of the substrate and the polishing pad, and the downforce exerted on the substrate against the polishing pad.

[0004] Unfortunately, undesirable contaminants introduced between the surface of the substrate and the polishing pad, i.e., the polishing interface, can cause undesirable scratches in the substrate surface. One source of undesirable contaminants at the polishing interface are particles, such as dielectric material flakes introduced in upstream manufacturing processes, that are loosely adhered to the surfaces of the bevel edge of a to-be-polished substrate. During substrate polishing these material flakes transfer from the bevel edge of the substrate to the polishing interface where they cause nano-scratches and/or micro-scratches to the substrate surface.

[0005] Unlike other types of detectivity, such as post-CMP residues, scratches cause permanent damage to the substrate surface and cannot be removed in a subsequent cleaning process. For example, even a light scratch that extends across multiple lines of metal interconnects can smear traces of the metallic ions disposed therein across the material layer being planarized and thereby induce leakage current and time-dependent dielectric break down in a resulting semiconductor device, thus affecting the reliability of the resulting device. More severe scratches can cause adjacent metal to undesirably twist and bridge together and/or cause disruptions and missing patterns in the substrate surface, which undesirably results in short circuits, and ultimately, device failure thus suppressing the yield of usable devices formed on the substrate. Similarly, scratches caused during STI CMP can affect gate oxide integrity causing the breakdown thereof and ultimately degrading device performance, reliability, and and/or suppressing yield.

[0006] Accordingly, there is a need in the art for systems and methods that solve the above described problems.

SUMMARY

[0007] Embodiments herein provide for carrier loading stations and methods which may be used to beneficially remove nano-scale and/or micron-scale particles adhered to a bevel edge of a substrate before polishing of the substrate. By removing such contaminates, e.g., loosely adhered particles of dielectric material, from the bevel edge, contamination of the polishing interface can be avoided thus preventing, and/or substantially reducing, scratch related detectivity associated therewith.

[0008] In one embodiment, a polishing system includes a carrier loading station. The carrier loading station includes one or more support surfaces for supporting a to- be-polished substrate; a load cup; and a fluid delivery assembly disposed within the load cup. The one or more support surfaces are sized and located to engage with radially outermost portions of an active surface of the to-be-polished substrate. The fluid delivery assembly includes one or more first nozzles configured to direct energized fluids towards a peripheral edge of the to-be-polished substrate when the to-be-polished substrate is vacuum chucked to a carrier head positioned over the carrier loading station and aligned therewith.

[0009] In one embodiment, a method of processing a substrate is provided. The method includes transferring a substrate from a carrier loading station of a polishing system to a carrier head positioned over the carrier loading station and aligned therewith; rotating the carrier head and the substrate about a carrier axis; using one or more first nozzles of the carrier loading station to direct an energized fluid towards a peripheral edge of the substrate as the carrier head rotates the substrate about a carrier axis; moving the carrier head to a polishing station of the polishing system; and urging the substrate against a polishing pad.

BRIEF DESCRIPTION OF THE DRAWINGS

[0010] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of its scope, and the disclosure may admit to other equally effective embodiments.

[0011] Figure 1A is a schematic side view of an exemplary polishing system configured to perform the methods set forth herein.

[0012] Figure 1 B is a schematic cross sectional view of a substrate carrier of the polishing system shown in Figure 1A.

[0013] Figure 2A is a schematic top down view of a loading station, according to one embodiment, which may be used with the polishing system of Figure 1A.

[0014] Figure 2B is a schematic side view of the loading station shown in Figure 2A taken along line 2B-2B. [0015] Figure 3A is a schematic top down view of a loading station, according to another embodiment, which may be used with the polishing system of Figure 1 A.

[0016] Figure 3B is a schematic side view of the loading station shown in Figure 3A taken along line 3B-3B.

[0017] Figure 4 is a diagram illustrating a method which may be used to remove contaminants from a bevel edge of a substrate, according to one embodiment.

[0018] Figures 5A schematically illustrates a relationship between a nozzle and a substrate edge during the method set forth in Figure 4.

[0019] Figure 5B illustrates a spray pattern of the nozzle shown in Figure 5A.

[0020] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one implementation may be beneficially incorporated in other implementations without further recitation.

DETAILED DESCRIPTION

[0021] Embodiments herein generally relate to chemical mechanical polishing (CMP) systems, and in particular, to head clean load/unload (HCLU) stations, herein carrier loading stations, used with CMP systems and methods related thereto. The carrier loading stations and methods may be used to beneficially remove nano-scale and/or micron-scale particles adhered to a bevel edge of a substrate before polishing of the substrate. By removing such contaminates, e.g., loosely adhered particles of dielectric material, from the bevel edge, contamination of the polishing interface can be avoided thus preventing and/or substantially reducing scratch related detectivity associated therewith.

[0022] Figure 1A is a schematic side view of an exemplary polishing system 100 which may be used to perform the methods set forth herein. Here, the polishing system 100 includes a base 101 , a plurality of polishing stations 102 (one shown), a loading station 104, a carrier transport system 106, a plurality of carrier assemblies 108, and a system controller 110. [0023] The loading station 104 is used to receive substrates from a substrate handler 112, e.g., a robot having an end effector 114, and return substrates back thereto and to load and unload substrates to and from individual ones of the carrier assemblies 108. Exemplary loading stations 200, 300 which may be used as the loading station 104 are further described in Figures 2A-2B and 3A-3B, respectively. The carrier transport system 106 may comprise any suitable system for supporting the plurality of carrier assemblies 108 and to moving the carrier assemblies 108 between the loading station 104 and one or more of the plurality of polishing stations 102 for substrate processing thereon. Here, the carrier transport system 106 is shown as a pivot module which moves the plurality of carrier assemblies 108 between the polishing station 102 and the loading station 104 by pivoting a support arm 107 about an axis A.

[0024] The polishing station 102 includes a platen 116 having a polishing pad 118 mounted thereon, a fluid delivery arm 120, and a pad conditioner assembly 122. The platen 116 is rotatable about an axis B using an actuator 128 coupled thereto. The fluid delivery arm 120 is positioned over the platen 116 and is used to deliver a polishing fluid, such as a polishing slurry having abrasives suspended therein, to a surface of the polishing pad 118. Typically, the polishing fluid contains a pH adjuster and other chemically active components, such as an oxidizing agent, to enable chemical mechanical polishing of the material surface of the substrate. The pad conditioner assembly 122 is used urge a fixed abrasive conditioning disk 124 against the polishing pad 118 before, after, or during polishing of a substrate in order to abrade, rejuvenate, and remove polish byproducts from, the surface of the polishing pad 118.

[0025] The carrier assemblies 108 are used to transport substrates to and from individual ones of the plurality of polishing stations 102 and therebetween and to urge the substrates against the rotating polishing pads in the presence of the polishing fluid. Here, each of the carrier assemblies 108 includes a carrier head 130 (further described in Figures 1A-1 B), a carrier shaft 132 coupled to the carrier head 130, and one or more actuators 136 coupled to the carrier shaft 132. The one or more actuators 136 are used to rotate the carrier head 130 about a carrier axis C, and to sweep the carrier head 130 between an inner radius and an outer radius of the polishing pad 118 while the carrier head 130 simultaneously exerts a force against a backside (nonactive) surface of a substrate 138 disposed therein.

[0026] An exemplary carrier head 130 is schematically illustrated in cross section in Figure 1 B. In Figure 1 B the carrier head 130 is shown in a loading mode where the substrate 138 is vacuum chucked thereinto. Here, the carrier head 130 includes a housing 140 and a base assembly 142 which is movably and sealingly coupled to the housing 140 to define a load chamber 144 therewith. The downforce exerted on the base assembly 142 and the relative positions of the housing 140 and the base assembly 142 are controlled by pressurizing the load chamber 144 or evacuating gases therefrom, e.g., by applying a vacuum to the load chamber 144.

[0027] The base assembly 142 includes a carrier base 146, a substrate backing assembly 147 movably and sealingly coupled to the carrier base 146 to collectively define a chamber 158 therewith, and an annular retaining ring 154 surrounding the substrate backing assembly 147 and movably coupled to the carrier base 146. The substrate backing assembly 147 includes a flexible membrane 148 and a membrane backing plate 150 having a plurality of apertures 152 formed therethrough. The membrane backing plate 150 is sealingly coupled to the carrier base 146 by a first actuator 156a, e.g., an annular membrane or bladder, disposed therebetween and the flexible membrane 148 is coupled to the membrane backing plate 150. During substrate polishing, the chamber 158 is pressurized so that the flexible membrane 148 exerts a downward force against the backside surface of the substrate 138 as the carrier head 130 rotates to urge the substrate 138 against the polishing pad 118.

[0028] When polishing is complete, or during substrate loading operations, the substrate 138 is chucked to the carrier head 130 by applying a vacuum to the chamber 158 to cause an upward deflection of the surface of the flexible membrane 148 in contact with the backside of the substrate 138. The upward deflection of the flexible membrane 148 creates a low pressure pocket between the flexible membrane 148 and the substrate 138, thus vacuum chucking the substrate to the carrier head 130. The membrane backing plate 150 provides rigid support for the substrate 138 to limit the upward motion of the flexible membrane 148 and the substrate 138 during vacuum chucking and to maintain the shape of the flexible membrane 148. [0029] The retaining ring 154 is coupled to the carrier base 146 using a second actuator 156b, e.g., an annular flexible membrane or bladder. During substrate polishing, the retaining ring 154 surrounds the substrate 138 and a downward force on the retaining ring 154 prevents the substrate 138 from slipping from the carrier head 130 as the polishing pad 118 moves therebeneath. The downward forces exerted on the retaining ring 154 and the substrate 138 are independently controlled to allow for fine tuning of polishing conditions at the substrate edge. Similarly, the relative positions of the retaining ring 154 and the membrane backing plate 150, e.g., the offset in the Z-direction therebetween, may be independently controlled using the respective actuators 156a,b coupled thereto. This controllable offset determines the amount of recess and/or protrusion P of the substrate 138 relative to the retaining ring 154 when the substrate 138 is vacuumed to the carrier head 130. In some embodiments, the controllable recess or protrusion P of the substrate 138 relative to the retaining ring 154 is advantageously used to facilitate cleaning of the bevel surface of the substrate 138 as described in the methods below.

[0030] Operation of the polishing system 100 is facilitated by the system controller 110 (Figure 1A). The system controller 110 includes a programmable central processing unit (CPU) 160, which is operable with a memory 162 (e.g., non-volatile memory) and support circuits 164. The support circuits 164 are conventionally coupled to the CPU 160 and comprise cache, clock circuits, input/output subsystems, power supplies, and the like, and combinations thereof coupled to the various components of the polishing system 100, to facilitate control of substrate processing operations therewith.

[0031] The CPU 160 is one of any form of general purpose computer processor used in an industrial setting, such as a programmable logic controller (PLC), for controlling various system components and sub-processors. The memory 162, coupled to the CPU 160, is non-transitory and is in the form of a computer-readable storage media containing instructions (e.g., non-volatile memory), that when executed by the CPU 160, facilitates the operation of the polishing system 100. The instructions in the memory 162 are in the form of a program product such as a program that implements the methods of the present disclosure. The program code may conform to any one of a number of different programming languages. In one example, the disclosure may be implemented as a program product stored on computer-readable storage media for use with a computer system. The program(s) of the program product define functions of the embodiments (including the methods described herein). Thus, the computer-readable storage media, when carrying computer- readable instructions that direct the functions of the methods described herein, are embodiments of the present disclosure.

[0032] Figure 2A is a schematic top down view of a loading station 200, according to one embodiment, which may be used in place of the loading station 104 of Figure 1A. Figure 2B is a schematic sectional view of the loading station 200 taken along line 2B-2B of Figure 2A. In order to reduce visual clutter, at least some of the features shown in Figure 2A are not shown in Figure 2B and vice versa.

[0033] The loading station 200 includes a cup assembly 202, a pedestal assembly 204, and a fluid delivery assembly 206. The cup assembly 202 includes a load cup 212 disposed on a first shaft 214 and an actuator 216 coupled to the first shaft 214 which is used to move the load cup 212 in the Z-direction, i.e. , towards and away from a carrier head positioned thereover (not shown). The load cup 212 includes an annular upper portion 218 and a lower housing 220 which collectively define a basin 222 for collecting fluids used during the carrier and substrate cleaning methods set forth herein. Fluids are drained from the basin 222 using a drain 224 fluidly coupled thereto.

[0034] The upper portion 218 includes one or more carrier alignment features, here an annular lip 226, extending upwardly from an upward facing surface of the upper portion 218 and located proximate to the peripheral edge thereof. During transfer of a substrate (shown in phantom in Figure 2B) to and from a carrier head (not shown), the load cup 212 is in a raised position and the annular lip 226 surrounds a portion of the outwardly facing surface of the carrier head to facilitate alignment between the carrier head and the load cup 212.

[0035] The pedestal assembly 204 includes a pedestal 228 disposed on a second shaft 230 and an actuator 232 coupled to the second shaft 230 which is used to move the pedestal in the Z-direction. The pedestal 228 has a generally circular shape when viewed from top down and an annular lip 238 disposed proximate to the circumferential edge of the pedestal 228 and extending upwardly therefrom. The annular lip 238 is sized and positioned to engage with the radially outermost portions of the active surface of a substrate 138, thus supporting the substrate 138 away from a recessed surface 240 of the pedestal 228 in order to minimize contact with, and to avoid the related scratching of, devices manufactured thereon.

[0036] The pedestal is movable in the Z-direction relative to the load cup 212 and may be extended upwardly therefrom and retracted thereinto to provide access to an end effector 114 (Figure 1A) of a substrate handler 112 and to facilitate substrate loading and unloading from the carrier head positioned thereabove. Here, the pedestal 228 has a plurality of openings 242 disposed therethrough and a plurality of cutouts 244a disposed about a peripheral edge thereof. The upper portion 218 of the load cup 212 features a corresponding plurality of cutouts 244b formed in the radially inward facing surface thereof which are aligned with the plurality of cutouts 244a formed in the edge of the pedestal. The pluralities of openings 242 and cutouts 244a, b enable the fluid delivery assembly 206 disposed therebeneath to direct fluids towards desired surfaces of a carrier head (and/or a vacuum chucked substrate) positioned over the loading station 200 and aligned therewith.

[0037] The fluid delivery assembly 206 is fixedly coupled to the load cup 212 and includes a one or more first nozzles 250a (three shown), one or more second nozzles 250b (three shown), and a plurality of third nozzles 250c. The one or more first nozzles 250a and the one or more second nozzles 250b are aligned with the openings formed by the cutouts 244a, b (when viewed form top down). In some embodiments, the one or more first nozzles 250a and one or more second nozzles 250b are used to direct cleaning fluids towards an annular gap disposed between a flexible membrane and the retaining ring of a rotating carrier head to remove polishing byproducts therefrom.

[0038] The one or more first nozzles 250a are fluidly coupled to a first fluid source 252a and are positioned to direct a first fluid towards the circumferential edge of a substrate when the substrate is disposed in a rotating carrier head positioned over the loading station 200. The first fluid is used to dislodge undesired contaminants, such as nano-particles or micro-particles of dielectric material, from the bevel surfaces of the substrate prior to the polishing thereof. Examples of suitable fluids which may be used as the first fluid with the one or first nozzles 250a include deionized water (DIW), pressurized gases, e.g., nitrogen (N2) or clean dry air (CDA), fluidized ice particles of DIW or carbon dioxide (CO2) and/or solutions comprising such ice particles, and combinations thereof.

[0039] Here, the one or more first nozzles 250a are positioned to direct the first fluid towards the bevel edge of a substrate disposed in a rotating substrate carrier. The first fluid may be emitted from the one or more first nozzles 250a in a continuous or pulsed pressurized jet or stream and/or may be acoustically energized (e.g., via acoustic cavitation), pneumatically energized (e.g., using liquid mixed with a pressured gas), thermally energized (e.g., steam), or combination(s) thereof. In some embodiments, the one or more first nozzles 250a are fluidly coupled to the first fluid source 252a through a manifold 254a which distributes the first fluid therebetween.

[0040] Acoustically energizing the first fluid includes ultrasonic or megasonic energization of the first fluid. For example, one or both of the first nozzles 250a and the first fluid source 252a may be configured with an acoustic generator 256, e.g., a piezoelectric transducer, operable in a frequency range from a lower ultrasonic range (e.g., about 20 KHz) to an upper megasonic range (e.g., about 2 MHz). Other frequency ranges can also be used.

[0041] Pneumatically energizing the first fluid includes emitting different phase components from the one or more first nozzles 250a, such as one or more of a liquid and/or solid phase material, e.g., DIW, fluidized ice particles, and/or solutions comprising suspended ice particles, and a pressurized gas, such as N2 or CDA. The different phase components may be combined in the first fluid source 252a or may be separately delivered to, and combined using, the one more first nozzles 250a. For example, in some embodiments, the one or more first nozzles 250a may be atomizer nozzles and the pressurized gas separately delivered thereto comprises an atomizing gas.

[0042] Thermally energizing the first fluid includes heating the first fluid to a vapor or gas phase, e.g., saturated or supersaturated steam. For example, in some embodiments the first fluid delivered to the one or more first nozzles 250a comprises water vapor or steam having a temperature in a range from about 80 °C to about 150 °C, such as about 100°C to about 120°C, at a pressure in the range from about 30 psig to about 140 psig, such as from about 40 psig to about 50 psig.

[0043] The one or more second nozzles 250b are fluidly coupled to a second fluid source 252b through a second manifold 254b which is used to distribute a second fluid between the one or more second nozzles. The one or more second nozzles are disposed in alignment with corresponding ones of the cutouts 244a, b (when viewed from top down) in an alternating arrangement with the one or more first nozzles 250a about peripheral edge of the pedestal 228. The one or more second nozzles 250b are positioned to direct the second fluid at the circumferential edge of a substrate disposed in a rotating carrier head that is aligned with the loading station 200 and positioned thereover. Typically, the second fluid 250b comprises a rinse solution, such as DIW, which is maintained close to ambient temperature or there below, such as about 40 °C or below, or in a range from about 20°C to about 40°C. The second fluid emitted by the one or more second nozzles 250b may be used to rinse away contaminants dislodged by the energized first fluid and/or to cool the substrate edge and surfaces of the carrier head heated by the energized first fluid.

[0044] The plurality of third nozzles 250c are disposed radially inward (with respect to the load cup 212) of the one or more first nozzles 250a and the one or more second nozzles 250b and are aligned with the openings 242 (when viewed from top down). The plurality of third nozzles 250c are used to direct a third fluid towards the active surface of a substrate disposed in a rotating carrier head or towards the flexible membrane of a rotating carrier head between substrates. The plurality of third nozzles 250c are in fluid communication with a third fluid source 252c through a third manifold 254c. The third fluid is used to rinse the active surface of a substrate disposed in a rotating carrier head and/or the flexible membrane of a rotating carrier head before and/or after the polishing process. The third fluid may comprise cleaning solution and/or a rinse agent, such as DIW, delivered in combination or sequentially.

[0045] The nozzles 250a-c described herein are configured to deliver any one or combination of fluid spray patterns, such as flat fan, hollow cone, full cone, a solid stream, or combinations thereof. In some embodiments, one or both of the first nozzles 250a and the second nozzles 250b are configured to deliver a flat fan spray pattern. [0046] Figure 3A is a schematic top down view of a loading station 300, according to another embodiment, which may be used in place of the loading station 104 of Figure 1A. Figure 3B is a schematic sectional view of the loading station 300 taken along line 3B-3B of Figure 3A. In order to reduce visual clutter, at least some of the features shown in Figure 3A are not shown in Figure 3B and vice versa.

[0047] The loading station 300 includes a cup assembly 302 and a fluid delivery assembly 306 disposed therein. The cup assembly 302 includes a load cup 312 disposed on a shaft 314 and an actuator 316 coupled to the shaft 314 which is used to move the load cup 312 in the Z-direction, i.e. , towards and away from a carrier head positioned thereover (not shown). The load cup 312 includes an annular upper portion 318 and a lower housing 320 which collectively define a basin 322 for collecting fluids used during the carrier and substrate cleaning methods set forth herein. Fluids are drained from the basin 322 using a drain 324 fluidly coupled thereto.

[0048] The upper portion 318 includes a plurality of carrier alignment features 326, an annular lip 338 disposed proximate to the radially inward edge of the upper portion, and a plurality of substrate alignment features 340. The plurality of carrier alignment features 326 extend upwardly from an upward facing surface of the upper portion 318 and are spaced apart from one another at locations proximate to the peripheral edge thereof. During transfer of a substrate (shown in phantom in Figure 3B) to and from a carrier head (not shown), the load cup 312 is in a raised position and the plurality of alignment features 326 contact the radially outward facing surface of the carrier head to facilitate alignment between the carrier head and the load cup 312.

[0049] The annular lip 338 is sized and positioned to engage with the radially outermost portions of the active surface of a substrate 138 (shown in phantom in Figure 3B) in order to minimize contact with, and to avoid the related scratching of, devices manufactured thereon. The annular lip 338 extends upwardly from the upper portion 318 to space the substrate 138 apart from the surface thereof in order to facilitate transfer of the substrate to and from a carrier head (not shown) positioned over the loading station 300. The plurality of substrate alignment features 340 are disposed proximate to the annular lip 338 and radially outward therefrom and are used to center the substrate 138 on the annular lip 338 as the substrate 138 is received from a substrate handler 112. Typically, the plurality of substrate alignment features 340 retract into the load cup 312 during carrier loading and unloading so as not to interfere therewith.

[0050] The upper portion 318 of the load cup 312 features one or more cutouts 344 (three shown) formed in the radially inward facing surface thereof which are aligned with one or more edge cleaning nozzles 350a (when viewed from top down) of the fluid delivery assembly 306 disposed there below. The one or more edge clean nozzles 350a are fluidly coupled to a first fluid source 352a and are positioned to direct a first fluid towards the circumferential edge of a substrate when the substrate is disposed in a rotating carrier head positioned over the loading station 300. Here, the edge clean nozzles 350a, the first fluid source 352a, and the first fluid are substantially similar to the first nozzles 250a, the first fluid source 252a, and the first fluid described in Figures 2A-2B and may include any one or combination of the features thereof. In some embodiments, the fluid delivery assembly 306 further includes one or more second nozzles (not shown) fluidly coupled to a second fluid source (not shown) which may be substantially similar to the one or more second nozzles 250b fluidly coupled to the second fluid source 252b as shown and described in Figures 2A-2B.

[0051] Here, the fluid delivery assembly 306 further includes a plurality of third nozzles 350c which are disposed radially inward (with respect to the load cup 312) of the one or more edge clean nozzles 350a. The plurality of third nozzles 350c are used to direct a third fluid towards the active surface of a substrate disposed in a rotating carrier head or towards the flexible membrane of a rotating carrier head positioned thereover. The plurality of third nozzles 350c are in fluid communication with a third fluid source 352c through a manifold 354. The third nozzles 350c, the third fluid source 352c, and the third fluid are substantially similar to the third nozzles 250c, the third fluid source 252c, and the third fluid described in Figures 2A-2B and may include any one or combination of the features and/or properties thereof.

[0052] Figure 4 is a diagram illustrating a method 400 of cleaning the bevel edge of a substrate using the loading stations 200, 300 described herein.

[0053] At activity 402, the method 400 includes transferring a substrate 138 from a carrier loading station 104 of a polishing system 100 to a carrier head 130 positioned thereover. In some embodiments, transferring the substrate 138 includes positioning the carrier head 130 over the carrier loading station 104 at activity 404, moving one or both of the loading station 104 and the carrier head 130 towards one another at activity 406, aligning the carrier head 130 and the carrier loading station 104 at activity 408, and vacuum chucking the substrate 138 to the carrier head at activity 410.

[0054] At activity 412, the method 400 includes rotating the carrier head 130, and thus the substrate 138 vacuum chucked thereto, about a carrier axis B. Concurrently with activity 412, activity 414 of the method 400 includes using one or more first nozzles 250a, 350a, of the carrier loading station 104 to direct an energized fluid towards a peripheral edge of the substrate 138.

[0055] At activity 416, the method 400 includes moving the carrier head 130 to a polishing station 102. At activity 418, the method 400 includes urging the substrate against a polishing pad 118.

[0056] As schematically illustrated in Figure 5A, the one or more first nozzles 250a and/or one or more second nozzles 250b (not shown) are positioned to direct an energized fluid 501 or a rinse fluids towards the peripheral edge of the substrate 138, e.g, the bevel edge. In some embodiments, one or more of the nozzles 250a, b are spaced apart from the substrate 138 (in the Z-direction) by a distance X of about 20 cm or less, such as about 15 cm or less.

[0057] In some embodiments, such as schematically illustrated in Figures 5A-5B, one or more of the first nozzles 250a and/or one or more of the second nozzles 250b (not shown) are configured to deliver a substantially flat fan-shaped spray pattern towards the peripheral edge of the substrate 138. Typically, in those embodiments, the nozzles 250a and or 250b are positioned so that a flat portion 501a (Figure 5A) of the spray pattern is generally tangential to the circumferential edge of the substrate 132e and forms an angle 503 with the substrate surface of between about 60° and about 120°, i.e., within 30° of orthogonal, such as within 20° or orthogonal, such as within 10° of orthogonal to the substrate surface. Here, the fan shaped portion 501 b (Figure 1 B) of the spray pattern forms an angle 505 of between about 60° and about 120°.

[0058] Beneficially, the carrier loading station and methods described above may be used to remove nano-scale and/or micron-scale particles adhered to a bevel edge of a substrate before polishing of the substrate. By removing such contaminates from the bevel edge, such as loosely adhered particles of dielectric material, contamination of the polishing interface can be avoided thus preventing and/or substantially reducing scratch related detectivity associated therewith.

[0059] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.