POLYCRYSTALLINE DIELECTRIC THIN FILM AND CAPACITIVE ELEMENT

WIPO Patent Application WO/2017/135296

A1

The purpose of the present invention is to provide a polycrystalline dielectric thin film and a capacitive element that have a large relative dielectric constant. Provided is a polycrystalline dielectric thin film that has a perovskite oxynitride as a principal component. The perovskite oxynitride is represented by compositional formula Aa1Bb1OoNn (a1+b1+o+n=5), and the a-axis length of the crystal lattice of the perovskite oxynitride is larger than a theoretical value.

YAMAZAKI KUMIKO (JP)
CHIHARA HIROSHI (JP)
NAGAMINE YUKI (JP)
YAMAZAKI JUNICHI (JP)
UMEDA YUJI (JP)

PCT/JP2017/003579

August 10, 2017

February 01, 2017

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TDK CORP (JP)

C23C14/06; H01B3/00; H01G4/33

JP2013543205A	2013-11-28
JP2013128073A	2013-06-27
JP2010143788A	2010-07-01

LE PAVEN C. ET AL.: "Growth of (Sr,La)-(Ta,Ti)- O-N perovskite oxide and oxynitride films by radio frequency magnetron sputtering: Influence of the reactive atmosphere on the film structure", JOURNAL OF CRYSTAL GROWTH, vol. 413, 11 December 2014 (2014-12-11), pages 5 - 11, XP029188790
OKA, DAICHI ET AL.: "Possible ferroelectricity in perovskite oxynitride SrTa02N epitaxial thin films", SCIENTIFIC REPORTS, vol. 4, no. 4987, 2014, pages 1 - 6, XP055404034
FASQUELLE, D. ET AL.: "High electric tunability on oxynitride perovskite LaTiO2N thin films", MATERIALS LETTERS, vol. 65, no. 19, 2011, pages 3102 - 3104, XP028251902
See also references of EP 3412793A4

MAEDA & SUZUKI (JP)

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