Title:
POLYCRYSTALLINE SILICON AND METHOD FOR CASTING SAME
Document Type and Number:
WIPO Patent Application WO/2013/145558
Kind Code:
A1
Abstract:
Provided are a polycrystalline silicon suitable for a solar cell with high conversion efficiency and a method for casting the same. This method for casting a polycrystalline silicon comprises: disposing a bottomless cooling crucible, which is divided in the circumferential direction into multiple members in at least a part of the axiswise section and in which the inside surface is coated with a nitrogen-containing mold-releasing agent, in the inside of an induction coil in a chamber; melting a raw material for a polycrystalline silicon in the bottomless cooling crucible by electromagnetic induction heating using the induction coil; and cooling and solidifying the obtained molten silicon while pulling the resulting silicon down. In the method, the pulling of the solidified silicon is conducted while controlling the carbon concentration of the molten silicon, the oxygen concentration thereof, and the nitrogen concentration thereof to 4.0×1017 to 6.0×1017 atoms/cm3, 0.3×1017 to 5.0×1017 atoms/cm3, and 8.0×1013 to 1.0×1018 atoms/cm3, respectively.
Inventors:
YAGI DAICHI (JP)
ABE TAKAHIRO (JP)
ABE TAKAHIRO (JP)
Application Number:
PCT/JP2013/001261
Publication Date:
October 03, 2013
Filing Date:
March 01, 2013
Export Citation:
Assignee:
SUMCO CORP (JP)
International Classes:
C01B33/02; H01L31/04
Foreign References:
| JP2009523694A | 2009-06-25 | |||
| JPH0251493A | 1990-02-21 | |||
| JP2010087327A | 2010-04-15 |
Attorney, Agent or Firm:
SUGIMURA, KENJI (JP)
Kenji Sugimura (JP)
Kenji Sugimura (JP)
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