Title:
POLYCRYSTALLINE SILICON SUBSTRATE, POLYCRYSTALLINE SILICON INGOT, PHOTOELECTRIC TRANSDUCTION ELEMENT AND PHOTOELECTRIC TRANSDUCTION MODULE
Document Type and Number:
WIPO Patent Application WO/2006/126371
Kind Code:
A1
Abstract:
A polycrystalline silicon substrate wherein within a region of about 3 mm diameter (&phgr ) including a point at which minority carrier life time (&tgr ) exhibits a minimum value on the substrate surface, subgrains (SG) manifested through given chemical solution treatment have an average diameter of 300 μm or greater. In a low-&tgr region exhibiting a small value of minority carrier life time (&tgr ) on the surface of polycrystalline silicon substrate, the smaller the size (SG diameter) of crystal subgrains (SG), the smaller the &tgr value. Thus, a substrate of high quality would result, thereby realizing an enhanced photoelectric transduction efficiency.
Inventors:
Niira, Koichiro c/o KYOCERA CORPORATION (Shiga Yohkaichi Plant 1166-6, Nagatanino,
Hebimizo-cho, Higashiohmi-sh, Shiga 55, 52785, JP)
Application Number:
PCT/JP2006/309043
Publication Date:
November 30, 2006
Filing Date:
April 28, 2006
Export Citation:
Assignee:
KYOCERA CORPORATION (6 Takeda Tobadono-cho, Fushimi-ku Kyoto-sh, Kyoto 01, 61285, JP)
Niira, Koichiro c/o KYOCERA CORPORATION (Shiga Yohkaichi Plant 1166-6, Nagatanino, Hebimizo-cho, Higashiohmi-sh, Shiga 55, 52785, JP)
Niira, Koichiro c/o KYOCERA CORPORATION (Shiga Yohkaichi Plant 1166-6, Nagatanino, Hebimizo-cho, Higashiohmi-sh, Shiga 55, 52785, JP)
International Classes:
C01B33/02; B22D25/04; B22D27/04; H01L31/04; C01B33/00; B22D25/00; B22D27/04; H01L31/04
Attorney, Agent or Firm:
Inaoka, Kosaku c/o AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS (Sun Mullion NBF Tower 21st Floor 6-12,
Minamihommachi 2-chome,, Chuo-k, Osaka-shi Osaka54, 54100, JP)