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Title:
POLYCRYSTALLINE-TYPE SOLAR CELL PANEL AND PROCESS FOR PRODUCTION THEREOF
Document Type and Number:
WIPO Patent Application WO/2011/158514
Kind Code:
A1
Abstract:
Disclosed is a polycrystalline-type silicon solar cell which can be produced at low cost by forming a polycrystalline silicon film having a PN junction in a simple manner. Specifically, an amorphous silicon film produced by sputtering using a dopant-containing silicon target is polycrystallized with plasma, and a PN junction is formed in the amorphous silicon film, thereby producing a polycrystalline silicon film having a PN junction. The polycrystalline silicon film having a PN junction is used as a silicon substrate for a polycrystalline-type silicon solar cell. Also disclosed is a technique for producing a dopant-containing silicon target from a silicon ingot.

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Inventors:
NAKAYAMA ICHIRO
YAMANISHI HITOSHI
OHIDO YOSHIHISA
KAMIKIHARA NOBUYUKI
OKUMURA TOMOHIRO
Application Number:
PCT/JP2011/003476
Publication Date:
December 22, 2011
Filing Date:
June 17, 2011
Export Citation:
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Assignee:
PANASONIC CORP (JP)
NAKAYAMA ICHIRO
YAMANISHI HITOSHI
OHIDO YOSHIHISA
KAMIKIHARA NOBUYUKI
OKUMURA TOMOHIRO
International Classes:
H01L31/04
Foreign References:
JP2005064134A2005-03-10
JPH06268242A1994-09-22
Attorney, Agent or Firm:
WASHIDA, KIMIHITO (JP)
Koichi Washida (JP)
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