POLYMER, PHOTORESIST COMPOSITION CONTAINING THE POLYMER, AND METHOD OF FORMING RESIST PATTERN

WIPO Patent Application WO/2005/080474

A1

A polymer which, in a chemical amplification type positive resist system, changes considerably in alkali solubility through exposure to light; a photoresist composition which contains the polymer and can form a fine pattern having high resolution; and a method of forming a resist pattern. The photoresist composition and the method of resist pattern formation employ the polymer, which has as an alkali-soluble group (i) at least one substituent selected among alcoholic hydroxy, carboxy, and phenolic hydroxy and in which the substituent has been protected by an acid-dissociable dissolution-inhibitive group (ii) represented by the following general formula (1): [Chemical formula 1] -CH₂-O-R wherein R represents a C₂₀ or lower organic group having at least one hydrophilic group.

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JP2022070285	POSITIVE RESIST MATERIAL AND PATTERNING METHOD
JP4028131	A photoresist polymer and a method for producing the same, a photoresist composition, and a method for forming a photoresist pattern.

OGATA TOSHIYUKI (JP)
MATSUMARU SYOGO (JP)
HADA HIDEO (JP)

PCT/JP2005/000660

September 01, 2005

January 20, 2005

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TOKYO OHKA KOGYO CO LTD (JP)
OGATA TOSHIYUKI (JP)
MATSUMARU SYOGO (JP)
HADA HIDEO (JP)

G03F7/039; C08G85/00; G03F7/004; H01L21/027; (IPC1-7): C08G85/00; G03F7/039; H01L21/027

JP2004348106A	2004-12-09
JP2003322970A	2003-11-14
JP2003295443A	2003-10-15

Tanai, Sumio (Yaesu Chuo-ku, Tokyo 53, JP)

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