POLYMER VIA ETCHING PROCESS - NORTHROP GRUMMAN CORP

Title:

POLYMER VIA ETCHING PROCESS

Document Type and Number:

WIPO Patent Application WO2005079454

Kind Code:

A3

Abstract:

An improved etching process for creating dimensionally accurate sub-micron and micron via-openings is disclosed. Specifically, this invention discloses a via etching process for a polymer layer (24) deposited on a semiconductor substrate (28) comprising the steps of: placing the semiconductor substrate comprising a polymer layer (24) deposited on the semiconductor substrate, a hard-mask (30) deposited on the polymer layer (24) and a photoresist mask (32) deposited on the hard-mask (30). The invention further, discloses performing a hard-mask opening step (34) comprising releasing a first fluoride gas (36) into the chamber. Furthermore, performing a polymer etching step (40) comprising releasing a second fluoride gas (42) into the chamber is disclosed. The invention also includes a hard-mask removal and tapered via step (46) to increase process margin.

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Inventors:

WANG JENNIFER
BARSKY MIKE

Application Number:

PCT/US2005/005040

Publication Date:

December 22, 2005

Filing Date:

February 16, 2005

Export Citation:

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Assignee:

NORTHROP GRUMMAN CORP (US)

International Classes:

H01L21/311; H01L21/768; (IPC1-7): H01L21/30; H01L21/3065

Foreign References:

US6004883A	1999-12-21
US5868951A	1999-02-09

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