Title:
POLYMORPHOUS MATERIALS, METHOD FOR PREPARING SAME, AND DEVICE COMPRISING SAME
Document Type and Number:
WIPO Patent Application WO2004097068
Kind Code:
A3
Abstract:
The invention concerns a polymorphous material of formula (I) SiXGeyCZXk: H, wherein: x is such that 0 = x, preferably 0 < x; y is such that 0 = y, preferably 0 < y; z is such that 0 = z, preferably 0 < z; k > 0; - x + y + z > 0; and X is selected among He, C, elements of the third column of the periodic table, such as B, Al, Ga, and In; elements of the fifth column of the periodic table, such as N, P, As, Sb; O; halides, such as F Cl, and Br; Ti; lanthanides and actinides; and mixtures thereof. Preferably, X is C. The invention also concerns a microelectronic, optoelectronic device, sensor or imager comprising said polymorphous material. The invention also concerns a method for preparing said material.
Inventors:
GUEDJ CYRIL (FR)
ROCA I CABARROCAS PERE (FR)
ROCA I CABARROCAS PERE (FR)
Application Number:
PCT/FR2004/050163
Publication Date:
April 14, 2005
Filing Date:
April 21, 2004
Export Citation:
Assignee:
COMMISSARIAT ENERGIE ATOMIQUE (FR)
CENTRE NAT RECH SCIENT (FR)
GUEDJ CYRIL (FR)
ROCA I CABARROCAS PERE (FR)
CENTRE NAT RECH SCIENT (FR)
GUEDJ CYRIL (FR)
ROCA I CABARROCAS PERE (FR)
International Classes:
C23C16/22; C23C16/30; (IPC1-7): C23C16/505; C23C16/30
Other References:
ATZMON Z. ET AL: "Chemical vapor deposition of heteroepitaxial Si1-x-yGexCy films on (100)Si substrates", APPL. PHYS. LETT., vol. 65, no. 20, 14 November 1994 (1994-11-14), pages 2559 - 2561, XP002293409
BOULMER J ET AL: "Realization of Si1-x-yGexCy/Si heterostructures by pulsed laser induced epitaxy of C<+> implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100)", JOURNAL OF CRYSTAL GROWTH, NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, NL, vol. 157, no. 1, 1 December 1995 (1995-12-01), pages 436 - 441, XP004001602, ISSN: 0022-0248
FENG B ET AL: "Probing for mechanical and tribological anomalies in the TiC/amorphous hydrocarbon nanocomposite coating system", PREPARATION AND CHARACTERIZATION, ELSEVIER SEQUOIA, NL, vol. 398-399, November 2001 (2001-11-01), pages 210 - 216, XP004328675, ISSN: 0040-6090
QU X-X ET AL: "A NEW APPROACH FOR SYNTHESIZING GE QUANTUM CRYSTALLITES EMBEDDED INA-SINX FILMS", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 64, no. 13, 28 March 1994 (1994-03-28), pages 1656 - 1658, XP000441244, ISSN: 0003-6951
MALOSIEV A R ET AL: "Germanium nanoclusters in germanosilicate glass heat-treated in hydrogen", INORGANIC MATERIALS MAIK NAUKA RUSSIA, vol. 39, no. 3, March 2003 (2003-03-01), pages 304 - 308, XP002302613, ISSN: 0020-1685
LIGATCHEV V ET AL: "Nano-scale morphology and electron spectrum of defect states in low-k SiOCH films", QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES. SYMPOSIUM (MATER. RES. SOC. SYMPOSIUM PROCEEDINGS VOL.737) MATER. RES. SOC WARRENDALE, PA, USA, vol. 737, 2 December 2002 (2002-12-02), pages 487 - 492, XP002302614, ISBN: 1-55899-674-5
BERTRAN E ET AL: "Surface analysis of nanostructured ceramic coatings containing silicon carbide nanoparticles produced by plasma modulation chemical vapour deposition", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 377-378, 1 December 2000 (2000-12-01), pages 495 - 500, XP004226741, ISSN: 0040-6090
FAINER N I ET AL: "Synthesis of nanocrystalline silicon carbonitride films by remote plasma enhanced chemical vapor deposition using the mixture of hexamethyldisilazane with helium and ammonia", JOURNAL OF CRYSTAL GROWTH, NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, NL, vol. 248, February 2003 (2003-02-01), pages 175 - 179, XP004399877, ISSN: 0022-0248
WATANABE Y ET AL: "EFFECTS OF LOW-FREQUENCY MODULATION ON RF DISCHARGE CHEMICAL VAPOR DEPOSITION", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 53, no. 14, 3 October 1988 (1988-10-03), pages 1263 - 1265, XP000052949, ISSN: 0003-6951
LIN C-H ET AL: "STRONG ROOM-TEMPERATURE PHOTOLUMINESCENCE OF HYDROGENATED AMORPHOUS SILICON OXIDE AND ITS CORRELATION TO POROUS SILICON", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 63, no. 5, 2 August 1993 (1993-08-02), pages 902 - 904, XP000388134, ISSN: 0003-6951
BOULMER J ET AL: "Realization of Si1-x-yGexCy/Si heterostructures by pulsed laser induced epitaxy of C<+> implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100)", JOURNAL OF CRYSTAL GROWTH, NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, NL, vol. 157, no. 1, 1 December 1995 (1995-12-01), pages 436 - 441, XP004001602, ISSN: 0022-0248
FENG B ET AL: "Probing for mechanical and tribological anomalies in the TiC/amorphous hydrocarbon nanocomposite coating system", PREPARATION AND CHARACTERIZATION, ELSEVIER SEQUOIA, NL, vol. 398-399, November 2001 (2001-11-01), pages 210 - 216, XP004328675, ISSN: 0040-6090
QU X-X ET AL: "A NEW APPROACH FOR SYNTHESIZING GE QUANTUM CRYSTALLITES EMBEDDED INA-SINX FILMS", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 64, no. 13, 28 March 1994 (1994-03-28), pages 1656 - 1658, XP000441244, ISSN: 0003-6951
MALOSIEV A R ET AL: "Germanium nanoclusters in germanosilicate glass heat-treated in hydrogen", INORGANIC MATERIALS MAIK NAUKA RUSSIA, vol. 39, no. 3, March 2003 (2003-03-01), pages 304 - 308, XP002302613, ISSN: 0020-1685
LIGATCHEV V ET AL: "Nano-scale morphology and electron spectrum of defect states in low-k SiOCH films", QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES. SYMPOSIUM (MATER. RES. SOC. SYMPOSIUM PROCEEDINGS VOL.737) MATER. RES. SOC WARRENDALE, PA, USA, vol. 737, 2 December 2002 (2002-12-02), pages 487 - 492, XP002302614, ISBN: 1-55899-674-5
BERTRAN E ET AL: "Surface analysis of nanostructured ceramic coatings containing silicon carbide nanoparticles produced by plasma modulation chemical vapour deposition", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 377-378, 1 December 2000 (2000-12-01), pages 495 - 500, XP004226741, ISSN: 0040-6090
FAINER N I ET AL: "Synthesis of nanocrystalline silicon carbonitride films by remote plasma enhanced chemical vapor deposition using the mixture of hexamethyldisilazane with helium and ammonia", JOURNAL OF CRYSTAL GROWTH, NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, NL, vol. 248, February 2003 (2003-02-01), pages 175 - 179, XP004399877, ISSN: 0022-0248
WATANABE Y ET AL: "EFFECTS OF LOW-FREQUENCY MODULATION ON RF DISCHARGE CHEMICAL VAPOR DEPOSITION", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 53, no. 14, 3 October 1988 (1988-10-03), pages 1263 - 1265, XP000052949, ISSN: 0003-6951
LIN C-H ET AL: "STRONG ROOM-TEMPERATURE PHOTOLUMINESCENCE OF HYDROGENATED AMORPHOUS SILICON OXIDE AND ITS CORRELATION TO POROUS SILICON", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 63, no. 5, 2 August 1993 (1993-08-02), pages 902 - 904, XP000388134, ISSN: 0003-6951
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