Title:
POLYSILICON SILICIDE ELECTRICAL FUSE DEVICE
Document Type and Number:
WIPO Patent Application WO/2009/070998
Kind Code:
A1
Abstract:
A polysilicon silicide fuse device, comprising: a substrate (11); a semiconductor
material layer (12) disposed on the substrate (11); the semiconductor material
layer (12) having two end portions (12a) doped with same impurity and a undoped
or lightly doped center portion (12b), in which impurity concentration of the
center portion (12b) is lower than impurity concentration of the two end portions
(12a); one or several fuse area (L) arranged in the center portion (12b); a silicide
metallization layer (13) disposed on the a semiconductor material layer (12).
Inventors:
GAO, Wenyu (818 Guoshoujing Road, Zhangjiang Hi-Tech Park Pudong, Shanghai 3, 201203, CN)
高文玉 (中国上海市浦东新区张江高科技园区郭守敬路818号, Shanghai 3, 201203, CN)
WEI, Minxia (818 Guoshoujing Road, Zhangjiang Hi-Tech Park Pudong, Shanghai 3, 201203, CN)
韦敏侠 (中国上海市浦东新区张江高科技园区郭守敬路818号, Shanghai 3, 201203, CN)
高文玉 (中国上海市浦东新区张江高科技园区郭守敬路818号, Shanghai 3, 201203, CN)
WEI, Minxia (818 Guoshoujing Road, Zhangjiang Hi-Tech Park Pudong, Shanghai 3, 201203, CN)
韦敏侠 (中国上海市浦东新区张江高科技园区郭守敬路818号, Shanghai 3, 201203, CN)
Application Number:
CN2008/072236
Publication Date:
June 11, 2009
Filing Date:
September 02, 2008
Export Citation:
Assignee:
GRACE SEMICONDUCTOR MANUFACTURING CORP. (818 Guoshoujing Road, Zhangjiang Hi-Tech Park Pudong, Shanghai 3, 201203, CN)
上海宏力半导体制造有限公司 (中国上海市浦东新区张江高科技园区郭守敬路818号, Shanghai 3, 201203, CN)
GAO, Wenyu (818 Guoshoujing Road, Zhangjiang Hi-Tech Park Pudong, Shanghai 3, 201203, CN)
高文玉 (中国上海市浦东新区张江高科技园区郭守敬路818号, Shanghai 3, 201203, CN)
WEI, Minxia (818 Guoshoujing Road, Zhangjiang Hi-Tech Park Pudong, Shanghai 3, 201203, CN)
上海宏力半导体制造有限公司 (中国上海市浦东新区张江高科技园区郭守敬路818号, Shanghai 3, 201203, CN)
GAO, Wenyu (818 Guoshoujing Road, Zhangjiang Hi-Tech Park Pudong, Shanghai 3, 201203, CN)
高文玉 (中国上海市浦东新区张江高科技园区郭守敬路818号, Shanghai 3, 201203, CN)
WEI, Minxia (818 Guoshoujing Road, Zhangjiang Hi-Tech Park Pudong, Shanghai 3, 201203, CN)
International Classes:
H01L23/525; H01L21/82; H01L23/62; H01L29/00; H01L23/52; H01L21/70; H01L23/58; H01L29/00
Attorney, Agent or Firm:
J.Z.M.C PATENT AND TRADEMARK LAW OFFICE (YU Mingwei, Room 5022 No.335, Guoding Road, Yang Pu, Shanghai 3, 200433, CN)
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