Title:
POLYSTYRENE-BASED SULFONIUM SALT AND PHOTORESIST COMPOSITION THEREOF
Document Type and Number:
WIPO Patent Application WO/2023/093598
Kind Code:
A1
Abstract:
The present invention discloses the use of a styrene sulfonium salt polymer containing a repeating unit as shown in the following formula (I) as an acid generator or a photoresist host material. Such a photoresist material has a good solubility in various polar solvents and is suitable for being prepared into a thin film. The sulfonium salt polymer per se contains an acid sensitive group, and thus needs no extra acid generator, and can effectively avoid the problem of acid diffusion in a chemically amplified photoresist. The sulfonium salt polymer can be directly used as a photoresist host material and used as a single-component photoresist system for different types of lithography, or can be used as an acid generator and be mixed with an acid-sensitive host material to serve as a photoresist material. By means of changing the structure of the sulfonium salt, the sulfonium salt polymer has a long absorption wavelength and can also be used for ultraviolet lithography and deep ultraviolet lithography.
Inventors:
CHEN JINPING (CN)
WANG ZHIHAO (CN)
LI YI (CN)
YU TIANJUN (CN)
ZENG YI (CN)
WANG ZHIHAO (CN)
LI YI (CN)
YU TIANJUN (CN)
ZENG YI (CN)
Application Number:
PCT/CN2022/132382
Publication Date:
June 01, 2023
Filing Date:
November 16, 2022
Export Citation:
Assignee:
THE TECHNICAL INST OF PHYSICS AND CHEMISTRY CHINESE ACADEMY OF SCIENCES (CN)
International Classes:
C08F12/08; C08F8/34; C08F112/08; C08F212/08; G03F7/039
Foreign References:
| CN114516927A | 2022-05-20 | |||
| JP2008007743A | 2008-01-17 | |||
| JP2006259508A | 2006-09-28 | |||
| JP2008065114A | 2008-03-21 | |||
| JPH06247925A | 1994-09-06 | |||
| US20100297560A1 | 2010-11-25 | |||
| CN102718902A | 2012-10-10 |
Attorney, Agent or Firm:
BEIJING ORIGINTELLIGENCE IP LAW FIRM (CN)
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