Title:
POROUS DBR- AND INGAN-BASED ENHANCED DETECTOR CHIP HAVING RESONANT CAVITY
Document Type and Number:
WIPO Patent Application WO/2018/184287
Kind Code:
A1
Abstract:
A porous DBR- and InGaN-based enhanced detector chip having a resonant cavity. The chip comprises: a substrate (10); a buffer layer (11) formed on the substrate (10); a lower porous DBR layer (12) formed on the buffer layer (11); an n-type GaN layer (13) formed on the lower porous DBR layer (12) and having a lower platform (13') on one side and a protrusion on anoother side; an active region (14) formed on the n-type GaN layer (13); a p-type GaN layer (15) formed on the active region (14); a side wall passivation layer (20) formed on an upper surface of a portion of the p-type GaN layer (15), and on side walls of the protruding portion of the n-type GaN layer (13), the active region (14), and p-type GaN layer (150), wherein a window is provided at a middle portion of the side wall passivation layer (20) on the upper surface of the p-type GaN layer (15); a transparent conductive layer (16) formed on the side wall passivation layer (20) and on the p-type GaN layer (15) at the window; a negative electrode (18) formed on the platform of the n-type GaN layer (13); a positive electrode (19) fabricated at a periphery of an upper surface of the side wall passivation layer (20); and an upper dielectric DBR layer (17) formed on the transparent conductive layer (16) and the positive electrode (19).
Inventors:
ZHAO LIXIA (CN)
LIU LEI (CN)
YANG CHAO (CN)
LIU LEI (CN)
YANG CHAO (CN)
Application Number:
PCT/CN2017/086854
Publication Date:
October 11, 2018
Filing Date:
June 01, 2017
Export Citation:
Assignee:
INST SEMICONDUCTORS CAS (CN)
International Classes:
H01L31/0232
Foreign References:
| TW200929758A | 2009-07-01 | |||
| CN1799150A | 2006-07-05 | |||
| CN1748290A | 2006-03-15 | |||
| US20040066821A1 | 2004-04-08 | |||
| US20150091046A1 | 2015-04-02 | |||
| US20150303655A1 | 2015-10-22 |
Other References:
PARK, S. H. ET AL.: "Applications of Electrochemistry for Novel Wide Bandgap GaN Devices ECS Transactions", vol. 66, no. 1, 31 December 2015 (2015-12-31), pages 147, XP055539744
Attorney, Agent or Firm:
CHINA SCIENCE PATENT & TRADEMARK AGENT LTD. (CN)
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