Title:
POROUS GALLIUM NITRIDE SINGLE CRYSTAL MATERIAL, PREPARATION METHOD THEREFOR AND USE THEREOF
Document Type and Number:
WIPO Patent Application WO/2018/165910
Kind Code:
A1
Abstract:
Disclosed is a porous gallium nitride single crystal material, characterized in that the porous gallium nitride single crystal material contains pores with sizes ranging from 10 nm to 2000 nm. The material has a self-supporting structure, and where same is a bulk single crystal, the material serves as an epitaxial substrate for a gallium nitride-based device, and can serve the function of stress relief and dislocation annihilation, and is more advantageous than non-porous gallium nitride single crystal substrates. Moreover, the material can also provide a high-quality template for 3D optoelectronic devices.
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Inventors:
CHEN CHENLONG (CN)
XIE KUI (CN)
XIE KUI (CN)
Application Number:
PCT/CN2017/076791
Publication Date:
September 20, 2018
Filing Date:
March 15, 2017
Export Citation:
Assignee:
FUJIAN INST RES STR MATTER CAS (CN)
International Classes:
C30B25/02; C30B29/40; H01L21/205
Foreign References:
CN1599031A | 2005-03-23 | |||
US6045611A | 2000-04-04 | |||
CN1801459A | 2006-07-12 | |||
US7118929B2 | 2006-10-10 |
Attorney, Agent or Firm:
PERIODIC LAW FIRM (CN)
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