Title:
POROUS SEMICONDUCTOR LAYER, POROUS-SEMICONDUCTOR-LAYER PASTE, AND DYE-SENSITIZED SOLAR CELL
Document Type and Number:
WIPO Patent Application WO/2015/129611
Kind Code:
A1
Abstract:
A porous semiconductor layer containing the following: anatase titanium dioxide particles (A) that have an average primary-particle size between 1 and 70 nm, inclusive; and particles (B) obtained by coating rutile titanium dioxide particles with an insulator, said rutile titanium dioxide particles having an average primary-particle size between 100 and 1,000 nm, inclusive.
Inventors:
YAKUBO TEPPEI (JP)
TAKANO SHINGO (JP)
TAKANO SHINGO (JP)
Application Number:
PCT/JP2015/054977
Publication Date:
September 03, 2015
Filing Date:
February 23, 2015
Export Citation:
Assignee:
SUMITOMO OSAKA CEMENT CO LTD (JP)
International Classes:
H01G9/20
Foreign References:
| JPH09106811A | 1997-04-22 | |||
| JP2003142171A | 2003-05-16 | |||
| JP2007073198A | 2007-03-22 | |||
| JP2005516364A | 2005-06-02 | |||
| JP2011113683A | 2011-06-09 | |||
| JP2012114017A | 2012-06-14 | |||
| US20120312370A1 | 2012-12-13 |
Other References:
See also references of EP 3113199A4
Attorney, Agent or Firm:
OHTANI, Tamotsu (JP)
Tamotsu Otani (JP)
Tamotsu Otani (JP)
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