Title:
POROUS SILICON CARBIDE SINTERED COMPACT AND SILICON CARBIDE METAL COMPOSITE SUITABLE FOR USE IN TABLE FOR WAFER POLISHING MACHINE
Document Type and Number:
WIPO Patent Application WO/2001/040138
Kind Code:
A1
Abstract:
A porous silicon carbide sintered compact which comprises a structure being composed of silicon carbide crystals (21, 22) and having open pores (23) present therein, wherein the carbide crystals have an average particle diameter of 20 $g(m) µm or more, a porosity of 40 % or less and a thermal conductivity of 80 W/m. K or more. The porous silicon carbide sintered compact is extremely excellent in uniformity of its temperature, thermal response characteristics and dimensional stability.
Inventors:
MAJIMA KAZUTAKA (JP)
YASUDA HIROYUKI (JP)
YASUDA HIROYUKI (JP)
Application Number:
PCT/JP2000/008284
Publication Date:
June 07, 2001
Filing Date:
November 24, 2000
Export Citation:
Assignee:
IBIDEN CO LTD (JP)
MAJIMA KAZUTAKA (JP)
YASUDA HIROYUKI (JP)
MAJIMA KAZUTAKA (JP)
YASUDA HIROYUKI (JP)
International Classes:
B24B7/22; B24D3/14; B24D3/34; B24D7/02; B24D7/10; C04B38/00; C04B41/45; C04B41/81; C09K3/14; C22C1/10; H01L21/306; (IPC1-7): C04B38/00; C04B41/88; C04B35/565; H01L21/304
Foreign References:
| JPH0733547A | 1995-02-03 | |||
| JPH11320394A | 1999-11-24 | |||
| JPS6212667A | 1987-01-21 | |||
| JPH04238866A | 1992-08-26 | |||
| JPH05319932A | 1993-12-03 | |||
| JPH0639704A | 1994-02-15 | |||
| JPH11171672A | 1999-06-29 | |||
| JPH06503162A | 1994-04-07 |
Other References:
See also references of EP 1174400A4
Attorney, Agent or Firm:
Onda, Hironori (Ohmiya-cho 2-chome Gifu-shi, Gifu, JP)
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