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Patent Searching and Data


Title:
A PORPHYRIN MEMRISTOR AND THE FABRICATION METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2018/113142
Kind Code:
A1
Abstract:
A porphyrin memristor device and a method of fabrication of the device are described that include a three-tier structure as anode, switching layer and cathode, the switching layer is interposed between the anode and cathode, also includes porphyrin as active film layer to transfer ions and electrons, switching layer includes an oxide buffer layer to provide oxygen ions. In an implementation, the active film layer comprises molecular materials containing porphyrin basic structural unit, the oxide bufferlayer may be aluminum oxide (Al2O3-x). The porphyrin memristor can be applied to a cross-array artificial neural computing system, and an array is used as a node linking processor to manufacture an artificial intelligence system having learning function.

Inventors:
WEI HUANG (CN)
LINGHAI XIE (CN)
YING ZHU (CN)
ZHIYONG WANG (CN)
LAIYUAN WANG (CN)
MINGDONG YI (CN)
Application Number:
PCT/CN2017/079886
Publication Date:
June 28, 2018
Filing Date:
April 10, 2017
Export Citation:
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Assignee:
UNIV NANJING POSTS & TELECOMMUNICATIONS (CN)
International Classes:
H01L45/00
Domestic Patent References:
WO2015034494A12015-03-12
Foreign References:
CN102931346A2013-02-13
CN104979472A2015-10-14
CN104979363A2015-10-14
US20130343114A12013-12-26
Attorney, Agent or Firm:
NANJING ZHISHI LAW FIRM OF INTELLECTUAL PROPERTY (CN)
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