POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMATION METHOD

Title:

POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMATION METHOD

Document Type and Number:

WIPO Patent Application WO/2022/190714

Kind Code:

A1

Abstract:

The present invention provides technology capable of forming a high-contrast resist pattern with minimal resist top loss. This positive resist composition comprises a copolymer A, a copolymer B, and a solvent, wherein the difference between the surface free energy of the copolymer A and the surface free energy of the copolymer B is 4 mJ/m2 or greater.

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Inventors:

HOSHINO MANABU (JP)

Application Number:

PCT/JP2022/003873

Publication Date:

September 15, 2022

Filing Date:

February 01, 2022

Export Citation:

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Assignee:

ZEON CORP (JP)

International Classes:

C08F220/24; G03F7/039; G03F7/20; G03F7/32

Domestic Patent References:

WO2018123667A1

2018-07-05

Foreign References:

JP2016009128A	2016-01-18
JP2018154754A	2018-10-04

Attorney, Agent or Firm:

SUGIMURA Kenji (JP)

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