Title:
POST-PLANARIZATION DENSIFICATION
Document Type and Number:
WIPO Patent Application WO/2012/122392
Kind Code:
A3
Abstract:
Processes for forming high density gap-filling silicon oxide on a patterned substrate are described. The processes increase the density of gap-filling silicon oxide particularly in narrow trenches. The density may also be increased in wide trenches and recessed open areas. The densities of the gap-filling silicon oxide in the narrow and wide trenches/open areas become more similar following the treatment which allows the etch rates to match more closely. This effect may also be described as a reduction in the pattern loading effect. The process involves forming then planarizing silicon oxide. Planarization exposes a new dielectric interface disposed closer to the narrow trenches. The newly exposed interface facilitates a densification treatment by annealing and/or exposing the planarized surface to a plasma.
Inventors:
LIANG JINGMEI (US)
INGLE NITIN K (US)
VENKATARAMAN SHANKAR (US)
INGLE NITIN K (US)
VENKATARAMAN SHANKAR (US)
Application Number:
PCT/US2012/028310
Publication Date:
December 20, 2012
Filing Date:
March 08, 2012
Export Citation:
Assignee:
APPLIED MATERIALS INC (US)
LIANG JINGMEI (US)
INGLE NITIN K (US)
VENKATARAMAN SHANKAR (US)
LIANG JINGMEI (US)
INGLE NITIN K (US)
VENKATARAMAN SHANKAR (US)
International Classes:
H01L21/304; H01L21/31
Foreign References:
| US20040248374A1 | 2004-12-09 | |||
| US20070207590A1 | 2007-09-06 | |||
| US5926722A | 1999-07-20 |
Other References:
HEO; JIN-HWA ET AL.: "The P-SOG Filling Shallow Trench Isolation Technolog y for sub-70nm Device", 2003 SYMPOSIUM ON VLSI TECHNOLOGY DIGENST OF TECHNI CAL PAPERS, pages 155 - 156
Attorney, Agent or Firm:
BERNARD, Eugene J. et al. (Two Embarcadero Center 8th Floo, San Francisco California, US)
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