Title:
POWER AMPLIFIER CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2022/168966
Kind Code:
A1
Abstract:
A power amplifier circuit comprising a first carrier amplifier that includes a differential amplifier circuit which has a first transistor and a second transistor, and a first peak amplifier that is formed on the same semiconductor substrate as the first carrier amplifier, wherein: the emitter or source of the first transistor is electrically connected to the emitter or source of the second transistor; the emitter or source of the first transistor is electrically connected to a ground electrode via a first bump; and the emitter or source of the second transistor is electrically connected to the ground electrode via a second bump differing from the first bump.
Inventors:
IMAI SHOHEI (JP)
Application Number:
PCT/JP2022/004579
Publication Date:
August 11, 2022
Filing Date:
February 07, 2022
Export Citation:
Assignee:
MURATA MANUFACTURING CO (JP)
International Classes:
H03F1/02; H03F3/24
Foreign References:
| US20180019711A1 | 2018-01-18 | |||
| JP2018032916A | 2018-03-01 |
Attorney, Agent or Firm:
INABA, Yoshiyuki et al. (JP)
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