Title:
POWER CONVERSION DEVICE AND POWER CONVERSION METHOD
Document Type and Number:
WIPO Patent Application WO/2018/139172
Kind Code:
A1
Abstract:
A SiC power transistor is made to perform a switching operation so that a voltage exceeding that of withstand voltage characteristics is not applied even when the upper limit of the withstand voltage of a SiC power semiconductor of a power conversion device is set to twice the reference voltage.
Inventors:
AKIYAMA SATORU (JP)
ISHIKAWA KATSUMI (JP)
ISHIKAWA KATSUMI (JP)
Application Number:
PCT/JP2017/047397
Publication Date:
August 02, 2018
Filing Date:
December 28, 2017
Export Citation:
Assignee:
HITACHI LTD (JP)
International Classes:
H02M1/08; H01L29/06; H01L29/12; H01L29/78; H02M7/48; H03K17/0812
Domestic Patent References:
| WO2012001805A1 | 2012-01-05 |
Foreign References:
| JP2016073052A | 2016-05-09 | |||
| JP2000031325A | 2000-01-28 |
Attorney, Agent or Firm:
SUNNEXT INTERNATIONAL PATENT OFFICE (JP)
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