Title:
POWER CONVERSION DEVICE AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/037780
Kind Code:
A1
Abstract:
This power conversion device is provided with: a semiconductor element that is provided on a substrate; a thermistor element for detecting the temperature of the substrate, said thermistor element being provided on the substrate, and having one end thereof connected to a grounding-side node, and the other end thereof connected to a detection node of the substrate; a current detection resistor, which has one end thereof connected to the grounding-side node, and the other end thereof connected to ground; a first voltage detection unit, which detects a first potential of the other end of the current detection resistor, and a second potential of the grounding-side node, and which outputs first detection signals; a control unit that controls the semiconductor element on the basis of the first detection signals; a temperature detection resistor having one end thereof connected to a reference potential, and the other end thereof connected to the detection node; and a temperature detection unit, which detects temperature on the basis of a third potential of the detection node, and which outputs temperature information signals including information of the temperature thus detected.
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Inventors:
KOBAYASHI YOSHINORI (JP)
Application Number:
PCT/JP2015/074418
Publication Date:
March 09, 2017
Filing Date:
August 28, 2015
Export Citation:
Assignee:
SHINDENGEN ELECTRIC MFG (JP)
International Classes:
H02M1/00; G01K7/01; G01K7/16; H01L25/07; H01L25/18; H03K17/14; H03K17/687
Foreign References:
| JP2005286270A | 2005-10-13 | |||
| JP2012249482A | 2012-12-13 | |||
| JP2013026010A | 2013-02-04 | |||
| JP2015015348A | 2015-01-22 |
Other References:
See also references of EP 3343741A4
Attorney, Agent or Firm:
KATSUNUMA Hirohito et al. (JP)
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