POWER ELEMENT DRIVE CIRCUIT

WIPO Patent Application WO/2018/070308

A1

Provided is a drive circuit which drives so as to turn an IGBT on and off, is capable of positively biasing the IGBT without imparting an excessive electric field to the IGBT, and is also capable of reducing the short circuit capacity of the IGBT. The drive circuit is equipped with a first series circuit which: is provided with first and second semiconductor switching elements connected in series and having a constant voltage source or a semiconductor element having positive temperature characteristics interposed therebetween; is provided between the power supply voltage and the ground potential; and is configured in a manner such that the series connection point between the constant voltage source or semiconductor element and the second semiconductor switching element provided on the ground potential side is connected to the IGBT gate. The drive circuit is also equipped with a second series circuit comprising third and fourth semiconductor switching elements which are connected in series, and configured in a manner such that the series connection point between the third and fourth semiconductor switching elements is connected to the IGBT emitter. The drive circuit is also equipped with a control circuit for turning the first through fourth semiconductor switching elements on and off in association with one another according to a control signal.

OHASHI HIDETOMO (JP)

PCT/JP2017/036047

April 19, 2018

October 03, 2017

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FUJI ELECTRIC CO LTD (JP)

H02M1/08; H03K17/08; H03K17/14; H03K17/567

JP5011585B2	2012-08-29
JP2001024492A	2001-01-26

HOSHINO, Hiroshi (JP)

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