Title:
POWER ELEMENT
Document Type and Number:
WIPO Patent Application WO/2005/122273
Kind Code:
A1
Abstract:
A power element is formed of a wide band gap semiconductor and has a transistor structure. A current path (20) of the power element includes a JFET (junction) region (2), a drift region (3) and a board (4), which have an on-resistance showing positive temperature dependence, and a channel region (1) having an on-resistance showing negative temperature dependence. An on-resistance temperature change of the entire power element is obtained by offsetting an on-resistance temperature change &Dgr Rp in the JFET (junction) region (2), the drift region (3) and the board (4) having the on-resistance showing the positive temperature dependence, by an on-resistance temperature change &Dgr Rn in the channel region (1) having the on-resistance showing the negative temperature dependence. A rate of the on-resistance change of the entire power element in the case where the power element temperature is changed from -30°C to 100°C to an on-resistance of the entire power element at -30°C is 50% or below.
Inventors:
Kitabatake, Makoto
Kusumoto, Osamu
Uchida, Masao
Takahashi, Kunimasa
Yamashita, Kenya
Hashimoto, Koichi
Kusumoto, Osamu
Uchida, Masao
Takahashi, Kunimasa
Yamashita, Kenya
Hashimoto, Koichi
Application Number:
PCT/JP2005/010691
Publication Date:
December 22, 2005
Filing Date:
June 10, 2005
Export Citation:
Assignee:
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (1006, Oaza Kadoma Kadoma-sh, Osaka 01, 57185, JP)
Kitabatake, Makoto
Kusumoto, Osamu
Uchida, Masao
Takahashi, Kunimasa
Yamashita, Kenya
Hashimoto, Koichi
Kitabatake, Makoto
Kusumoto, Osamu
Uchida, Masao
Takahashi, Kunimasa
Yamashita, Kenya
Hashimoto, Koichi
International Classes:
H01L29/06; H01L29/78; H01L29/80; H01L29/808; H01L29/24; (IPC1-7): H01L29/78; H01L29/80
Attorney, Agent or Firm:
Okuda, Seiji (OKUDA & ASSOCIATES, 10th Floor Osaka Securities Exchange Bldg.,
8-16, Kitahama 1-chome, Chuo-k, Osaka-shi Osaka 41, 54100, JP)