Title:
POWER MODULE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2018/181417
Kind Code:
A1
Abstract:
A power module (1) is provided with: a flat-plate-shaped thick copper substrate (2); a conductive stress relaxation metal layer (24U) disposed on the thick copper substrate (2); a semiconductor device (22) disposed on the stress relaxation metal layer (24U); and a plated layer (30) disposed on the stress relaxation metal layer (24U). The semiconductor device (22) is joined to the stress relaxation metal layer (24U) with the plated layer (30) interposed therebetween. The thick copper substrate (2) is provided with: a first thick copper layer (14); and a second thick copper layer (18) disposed on the first thick copper layer (14). The stress relaxation metal layer (24U) is disposed on the second thick copper layer (18). A part of the semiconductor device (22) is sunk into the stress relaxation metal layer (24U) and is fixed thereto. The joint surfaces of the semiconductor device (22) and the stress relaxation metal layer (24U) are integrated via diffusion bonding or solid-phase diffusion bonding. Thus provided is a power module in which the reliability of a joint is enhanced without increasing thermal resistance.
Inventors:
HATANO MAIKO (JP)
OTSUKA TAKUKAZU (JP)
OTSUKA TAKUKAZU (JP)
Application Number:
PCT/JP2018/012634
Publication Date:
October 04, 2018
Filing Date:
March 28, 2018
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L23/36; H01L21/52; H01L21/60; H01L23/12; H01L29/12; H01L29/739; H01L29/78
Domestic Patent References:
| WO2017130512A1 | 2017-08-03 |
Foreign References:
| JP2013191640A | 2013-09-26 | |||
| JP2016103526A | 2016-06-02 |
Attorney, Agent or Firm:
MIYOSHI Hidekazu et al. (JP)
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