Title:
POWER MODULE
Document Type and Number:
WIPO Patent Application WO/2015/008385
Kind Code:
A1
Abstract:
The present invention increases the reliability of a power module and decreases unevenness in characteristics of an SiC unipolar element stemming from unevenness in epi concentration of an SiC wafer. The power module is configured from at least two types of elements differing from each other in surface structure as SiC elements having the same function connected in parallel. When a JBS-structured Schottky barrier diode is used as an SiC element, the on voltage (Vf) is controlled by changing the pattern shape at an n-type semiconductor region and a p-type semiconductor region at the surface, thus cancelling Vf fluctuations stemming from epi concentration.
Inventors:
YASUI KAN (JP)
YUKUTAKE SEIGO (JP)
YUKUTAKE SEIGO (JP)
Application Number:
PCT/JP2013/069658
Publication Date:
January 22, 2015
Filing Date:
July 19, 2013
Export Citation:
Assignee:
HITACHI POWER SEMICONDUCTOR DEVICE LTD (JP)
International Classes:
H01L25/07; H01L25/18; H01L27/04; H01L29/47; H01L29/78; H01L29/872
Foreign References:
| US20040188706A1 | 2004-09-30 | |||
| JP2008010617A | 2008-01-17 | |||
| JP2012094648A | 2012-05-17 |
Attorney, Agent or Firm:
POLAIRE I. P. C. (JP)
Polaire Intellectual Property Corporation (JP)
Polaire Intellectual Property Corporation (JP)
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