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Patent Searching and Data


Title:
POWER MODULE
Document Type and Number:
WIPO Patent Application WO/2017/175326
Kind Code:
A1
Abstract:
To eliminate a rapid temperature increase by instantly interrupting a short-circuiting current when a short-circuit failure occurred in a power semiconductor element in a power module. A power module 10 has a package 10a. In the package 10a, the power module has: a MOSFET 21, i.e., a power semiconductor element; a resistor 23 as a detection means, which detects the operation state of the MOSFET 21, and outputs detection signals; and a MOSFET 22, i.e., a current interrupting switch connected in series to the MOSFET 21. In response to control signals Si2 generated on the basis of the detection signals, the MOSFET 22 becomes in a conductive state when the MOSFET 21 is normally operating, and when a short-circuit failure occurred in the MOSFET 21, the MOSFET 22 becomes in an interrupting state, and interrupts a current flowing in the MOSFET 21.

Inventors:
SUZUKI KENICHI (JP)
Application Number:
PCT/JP2016/061223
Publication Date:
October 12, 2017
Filing Date:
April 06, 2016
Export Citation:
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Assignee:
SHINDENGEN ELECTRIC MFG (JP)
International Classes:
H01L23/58; H02M7/12
Domestic Patent References:
WO2011086705A12011-07-21
Foreign References:
JPS6264120A1987-03-23
JPH0340517A1991-02-21
JPH0854427A1996-02-27
JPH02266712A1990-10-31
JPH07115354A1995-05-02
JP2008017557A2008-01-24
JP2009019953A2009-01-29
Other References:
See also references of EP 3442019A4
Attorney, Agent or Firm:
KAKIMOTO Yasushige et al. (JP)
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