Title:
POWER MOSFET WITH METAL FILLED DEEP SINKER CONTACT FOR CSP
Document Type and Number:
WIPO Patent Application WO/2018/000357
Kind Code:
A1
Abstract:
A method of forming an IC (180) including a power semiconductor device includes providing a substrate (100) having an epi layer (150) thereon with at least one transistor (160) formed therein covered by a pre-metal dielectric (PMD) layer (118). Contact openings are etched from through the PMD into the epi layer to form a sinker trench extending to a first node of the device. A metal fill material (128b) is deposited to cover a sidewall and bottom of the sinker trench but not completely fill the sinker trench. A dielectric filler layer (128c) is deposited over the metal fill material to fill the sinker trench. An overburden region of the dielectric filler layer is removed stopping on a surface of the metal fill material in the overburden region to form a sinker contact (128). A patterned interconnect metal is formed providing a connection between the interconnect metal and metal fill material on the sidewall of the sinker trench.
Inventors:
LIU YUNLONG (CN)
YANG HONG (US)
LIN HO (CN)
LV TIANPING (CN)
ZOU SHENG (CN)
JIA QIULING (CN)
XIONG YUFEI (CN)
YANG HONG (US)
LIN HO (CN)
LV TIANPING (CN)
ZOU SHENG (CN)
JIA QIULING (CN)
XIONG YUFEI (CN)
Application Number:
PCT/CN2016/087968
Publication Date:
January 04, 2018
Filing Date:
June 30, 2016
Export Citation:
Assignee:
TEXAS INSTRUMENTS INC (US)
TEXAS INSTRUMENTS JAPAN LTD (JP)
TEXAS INSTRUMENTS JAPAN LTD (JP)
International Classes:
H01L21/311; H01L29/417; H01L21/768; H01L29/78
Foreign References:
| US20130320443A1 | 2013-12-05 | |||
| CN105009296A | 2015-10-28 | |||
| CN104412365A | 2015-03-11 | |||
| US6489217B1 | 2002-12-03 | |||
| US5777362A | 1998-07-07 | |||
| US7445996B2 | 2008-11-04 |
Attorney, Agent or Firm:
JEEKAI & PARTNERS (CN)
Download PDF: