Title:
POWER SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE, AND ELECTRIC SYSTEM
Document Type and Number:
WIPO Patent Application WO/2022/091633
Kind Code:
A1
Abstract:
This power semiconductor device comprises: a substrate on one surface of which a positive electrode wire connected to a first conductor that is on the high potential side and a negative electrode wire connected to a fourth conductor that is on the low potential side are provided and on the other surface of which output wires connected to a second conductor and a third conductor are provided facing the positive electrode wire and the negative electrode wire; and a first capacitor for smoothing DC power supplied to a first upper arm circuit body and a first lower arm circuit body. The substrate is disposed between the first upper arm circuit body and the first lower arm circuit body. The first capacitor is disposed between the first upper arm circuit body and the first lower arm circuit body and connected to the positive electrode wire and the negative electrode wire on the substrate.
Inventors:
ARAKI TAKAHIRO (JP)
TOKUYAMA TAKESHI (JP)
AOYAGI SHIGEHISA (JP)
MAEKAWA NORIYUKI (JP)
TOKUYAMA TAKESHI (JP)
AOYAGI SHIGEHISA (JP)
MAEKAWA NORIYUKI (JP)
Application Number:
PCT/JP2021/034314
Publication Date:
May 05, 2022
Filing Date:
September 17, 2021
Export Citation:
Assignee:
HITACHI ASTEMO LTD (JP)
International Classes:
H02M7/48
Domestic Patent References:
| WO2012073571A1 | 2012-06-07 |
Foreign References:
| JP2013252009A | 2013-12-12 | |||
| JP2009225612A | 2009-10-01 | |||
| JP2015039295A | 2015-02-26 | |||
| JPH10304680A | 1998-11-13 |
Attorney, Agent or Firm:
SUNNEXT INTERNATIONAL PATENT OFFICE (JP)
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