POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE POWER SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2011/007387

A1

Disclosed is a power semiconductor device that can solve a problem involved in the conventional high-speed switching power semiconductor device that, upon switching, a displacement current flows to generate a high voltage which sometimes causes dielectric breakdown of a thin insulating film such as a gate insulating film.  The power semiconductor device comprises a first conductivity type semiconductor substrate (80), a first conductivity type drift layer (70) provided on a first principal plane of the semiconductor substrate (80), a second conductivity type first well region (50) provided on a part of the surface of the drift layer (70), a second conductivity type second well region (51) that is provided away from the first well region (50) on a part of the surface of the drift layer (70) and has a smaller area than the first well region (50) as viewed from above, a first conductivity type low-resistance region (55) that is provided on the surface of the first well region (50) and has a higher impurity concentration than the first well region (50), a gate insulating film (32) provided in contact with the surface of the first well region (50), and a gate electrode (21) provided in contact with the surface of the gate insulating film (32).

WATANABE SHOYU (JP)
NAKATA SHUHEI (JP)
MIURA NARUHISA (JP)

PCT/JP2009/003321

January 20, 2011

July 15, 2009

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MITSUBISHI ELECTRIC CORP (JP)
WATANABE SHOYU (JP)
NAKATA SHUHEI (JP)
MIURA NARUHISA (JP)

H01L29/78; H01L21/336; H01L27/04; H01L29/12

JPH04229661A

1992-08-19

TAKAHASHI, Shogo et al. (JP)
Shogo Takahashi (JP)

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