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Patent Searching and Data


Title:
POWER SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2010/004609
Kind Code:
A1
Abstract:
A power semiconductor device capable of reducing an installation area. In order to achieve it, a first metal plate is connected to a first power terminal of a power chip, and a second metal plate facing the first metal plate is connected to a second power terminal of the power chip. The power chip is covered by an insulating cover from the outer sides of the first and second metal plates. An external terminal connected to a signal terminal of the power chip is led out from a top surface of the insulating cover. The first and second metal plates have respective first and second external power terminals led out from a bottom surface of the insulating cover. The first external power terminal and the second external power terminal are bent away from each other. In a direction to which the first external power terminal or the second external power terminal was bent, there is no second external power terminal present on an opposite side of the first external power terminal across the insulating cover, and there is no first external power terminal present on an opposite side of the second external power terminal across the insulating cover.

Inventors:
TSUNODA TETSUJIRO (JP)
HAMAGUCHI TAKUYA (JP)
Application Number:
PCT/JP2008/062281
Publication Date:
January 14, 2010
Filing Date:
July 07, 2008
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP (JP)
TSUNODA TETSUJIRO (JP)
HAMAGUCHI TAKUYA (JP)
International Classes:
H01L23/48; H01L25/07; H01L25/18
Foreign References:
JP2005217248A2005-08-11
JP2007281274A2007-10-25
JP2007123579A2007-05-17
JP2000183249A2000-06-30
JPH1174456A1999-03-16
Attorney, Agent or Firm:
TAKADA, Mamoru et al. (JP)
Takada 守 (JP)
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