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Patent Searching and Data


Title:
POWER SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/064873
Kind Code:
A1
Abstract:
The purpose of the present invention is to reduce the size of a power semiconductor device and improve the reliability thereof. A first opening size of a flow path joined to a front surface of a power module is created with a small tolerance so as to match the size of a first heat dissipation base. A second opening size of a flow path joined to a rear surface of the power module is created to be large so as to be able to absorb the tolerance of a front/rear heat dissipation base in the surface direction. In addition, an outside surface of the first heat dissipation base and an inside surface of the first opening are inserted while being substantially abutted onto each other, and a second heat dissipation base is assembled with a principal surface thereof and an outer surface of the flow path being abutted onto each other.

Inventors:
NISHIHARA ATSUO (JP)
HIRAO TAKASHI (JP)
Application Number:
PCT/JP2018/028187
Publication Date:
April 04, 2019
Filing Date:
July 27, 2018
Export Citation:
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Assignee:
HITACHI AUTOMOTIVE SYSTEMS LTD (JP)
International Classes:
H02M7/48; H01L23/36; H01L25/07; H01L25/18
Foreign References:
JP2017011923A2017-01-12
JP2012257369A2012-12-27
Attorney, Agent or Firm:
TODA Yuji (JP)
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