Title:
POWER SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/142543
Kind Code:
A1
Abstract:
The problem of the present invention is to provide a power module with good reliability. This power semiconductor device is provided with a semiconductor element and first and second conductors which sandwich the semiconductor element and which are each connected to the semiconductor element via a solder material. The semiconductor element has a first electrode on one surface, a second electrode on the other surface, wires on the one surface, and a protective film covering the wires. The first conductor is disposed on the one surface side of the semiconductor element and the first conductor further has a protruding part that protrudes further toward a portion facing the protective film than other portions.
Inventors:
SHIMAZU HIROMI (JP)
TANIE HISASHI (JP)
MATSUSHITA AKIRA (JP)
TANIE HISASHI (JP)
MATSUSHITA AKIRA (JP)
Application Number:
PCT/JP2018/045404
Publication Date:
July 25, 2019
Filing Date:
December 11, 2018
Export Citation:
Assignee:
HITACHI AUTOMOTIVE SYSTEMS LTD (JP)
International Classes:
H01L23/36; H01L21/60; H01L25/07; H01L25/18; H02M7/48
Foreign References:
| JP2011066377A | 2011-03-31 |
Attorney, Agent or Firm:
TODA Yuji (JP)
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