Title:
POWER SEMICONDUCTOR MODULE AND POWER CONVERSION DEVICE USING SAME
Document Type and Number:
WIPO Patent Application WO/2019/163205
Kind Code:
A1
Abstract:
This power semiconductor module (1000) is provided with: at least one upper arm provided between a positive electrode line (PL) and a node (NDa) and comprising a power semiconductor element (1Pa) and a free-wheeling diode (2Pa) which are connected in parallel; at least one lower arm provided between a negative electrode line (NL) and the node (NDa) and comprising a power semiconductor element (1Na) and a free-wheeling diode (2Na) which are connected in parallel; a snubber circuit (5) provided between the positive electrode line (PL) and the negative electrode line (NL). The snubber circuit (5) includes a snubber capacitor (3) and a snubber resistor (4) which are connected in series. At least one control terminal (7) outputs a voltage representing the temperature of the snubber resistor (3) or a voltage associated with the temperature of the snubber resistor (3) to a driver (11) for driving the power semiconductor elements (1Pa, 1Na).
Inventors:
HORIGUCHI TAKESHI (JP)
MIKI TAKAYOSHI (JP)
MIKI TAKAYOSHI (JP)
Application Number:
PCT/JP2018/040702
Publication Date:
August 29, 2019
Filing Date:
November 01, 2018
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H02M7/48; H01L25/07; H01L25/18
Foreign References:
| JP2012210153A | 2012-10-25 | |||
| JPH06303762A | 1994-10-28 | |||
| CN102354959A | 2012-02-15 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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