Title:
POWER SEMICONDUCTOR MODULE AND POWER CONVERSION DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/208713
Kind Code:
A1
Abstract:
A power semiconductor module (1) is provided with a circuit substrate (10), a power semiconductor element (19) including a semiconductor substrate (20), and at least one bonding portion (5). The at least one bonding portion (5) includes a first metal member (12) distal from the semiconductor substrate (20), a second metal member (23) proximal to the semiconductor substrate (20), and a bonding layer (15) bonding the first metal member (12) and the second metal member (23) together. At the same temperature, the 0.2% proof stress of the first metal member (12) is smaller than the 0.2% proof stress of the second metal member (23) and is smaller than the shear strength of the bonding layer (15).
Inventors:
FUJITA JUN (JP)
Application Number:
PCT/JP2019/015471
Publication Date:
October 15, 2020
Filing Date:
April 09, 2019
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/52; H02M7/48
Domestic Patent References:
| WO2017221730A1 | 2017-12-28 |
Foreign References:
| JP2017084881A | 2017-05-18 | |||
| JP2013254856A | 2013-12-19 | |||
| JP2014177031A | 2014-09-25 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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