POWER SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING SAME

WIPO Patent Application WO/2012/172862

A1

[Objective] To provide a power semiconductor module in which a sealing material is used which is suited to the temperature in the vicinity of a power semiconductor module element in which a silicon carbide element is used, and the exterior peripheral temperature thereof. [Solution] A power semiconductor module comprises: an insulation layer; a copper-based substrate, further comprising a first copper block and a second copper block which are respectively anchored to one face and another face of the insulation layer; a plurality of power semiconductor elements in which silicon carbide is used, one face of which being anchored upon the first copper block by a conductive bonding layer; a plurality of implant pins which are anchored to another face of each respective power semiconductor element by a conductive binding layer; a printed substrate which is anchored to the implant pins and is positioned facing the power semiconductor element; a first sealing material wherein a heat-resistant material is not added and which is positioned at least between the power semiconductor elements and the printed substrate; and a second sealing material wherein a heat-resistant material is added and which is positioned to cover the first sealing material.

YANAGAWA KATSUHIKO (JP)
IKEDA YOSHINARI (JP)

PCT/JP2012/060278

December 20, 2012

April 16, 2012

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FUJI ELECTRIC CO LTD (JP)
YANAGAWA KATSUHIKO (JP)
IKEDA YOSHINARI (JP)

H01L23/29; H01L23/31; H01L25/07; H01L25/18

JP2009064852A	2009-03-26
JP2003082241A	2003-03-19
JPH04206651A	1992-07-28
JP2010219420A	2010-09-30

SAKAMOTO TOMOHIRO (JP)
Tomohiro Sakamoto (JP)

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