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Title:
POWER SEMICONDUCTOR MODULE
Document Type and Number:
WIPO Patent Application WO/2015/004990
Kind Code:
A1
Abstract:
Provided is a power semiconductor module wherein stress generated at a soldering section of a relay terminal is relaxed. A power semiconductor module (1) is provided with a substrate (2), relay terminals (9, 10), external connecting terminals (13, 14), and a relay terminal holding member (6). The relay terminals (9, 10) are connected to the substrate (2) with a solder (4) therebetween. The external connecting terminals (13, 14) are bonded to the relay terminals (9, 10), respectively. The non-conductive relay terminal holding member (6) holds end portions of the relay terminals (9, 10), said end portions being on the side bonded to the solder (4).

Inventors:
WATARI SHINJIRO (JP)
KOKUBUN SHUICHI (JP)
YAMADA TAKESHI (JP)
HARADA TSUYOSHI (JP)
Application Number:
PCT/JP2014/063015
Publication Date:
January 15, 2015
Filing Date:
May 16, 2014
Export Citation:
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Assignee:
HITACHI AUTOMOTIVE SYSTEMS LTD (JP)
International Classes:
H01L25/18; H01L25/07
Foreign References:
JPH05160339A1993-06-25
JPH11177017A1999-07-02
JPH05167002A1993-07-02
JP2006310523A2006-11-09
JP2010063242A2010-03-18
JPH0547989A1993-02-26
Other References:
See also references of EP 3021358A4
Attorney, Agent or Firm:
INOUE Manabu et al. (JP)
Manabu Inoue (JP)
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