Title:
POWER SEMICONDUCTOR MODULE
Document Type and Number:
WIPO Patent Application WO/2015/033724
Kind Code:
A1
Abstract:
Provided is a power semiconductor module in which, even if a heat sink substrate to be joined to the lower side of an insulative wiring board is made thinner than a conventional one, the concentration of stress occurring in a solder layer for joining the insulative wiring board to the heat sink substrate is reduced and a crack hardly occurs in the solder layer.
The semiconductor module comprises: an insulative wiring board (1); a semiconductor element (4) mounted on one principal surface of the insulative wiring board (1); a heat sink substrate (10a) joined to the other principal surface of the insulative wiring board (1); a plurality of fins (10b) each having one end fixed to the other principal surface of the heat sink substrate (10a) and the other end being a free end; and a water jacket (11) for housing the fins (10b) and flowing a coolant between the fins (10b). In the power semiconductor module, part of the other ends of the fins are joined to the water jacket (11) and used as reinforcing fins.
More Like This:
Inventors:
YAMADA TAKAFUMI (JP)
GOHARA HIROMICHI (JP)
NISHIMURA YOSHITAKA (JP)
GOHARA HIROMICHI (JP)
NISHIMURA YOSHITAKA (JP)
Application Number:
PCT/JP2014/070538
Publication Date:
March 12, 2015
Filing Date:
August 05, 2014
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L23/36; H01L23/473; H01L25/07; H01L25/18; H05K7/20
Domestic Patent References:
| WO2011087028A1 | 2011-07-21 | |||
| WO2011021384A1 | 2011-02-24 |
Foreign References:
| JP2010093020A | 2010-04-22 | |||
| JP2010161203A | 2010-07-22 | |||
| JP2012151328A | 2012-08-09 | |||
| JPH09162335A | 1997-06-20 |
Attorney, Agent or Firm:
MATSUI Shigeru et al. (JP)
Shigeru Matsui (JP)
Shigeru Matsui (JP)
Download PDF: