Title:
POWER SEMICONDUCTOR MODULE
Document Type and Number:
WIPO Patent Application WO/2018/179573
Kind Code:
A1
Abstract:
This power semiconductor module is provided with: a metal base plate; an insulating substrate which is arranged on the metal base plate and has an electrode; a semiconductor element which is arranged on the insulating substrate; a case which is arranged on the metal base plate so as to surround the insulating substrate and the semiconductor element; and a potting sealing agent which is filled into the space that is enclosed by the metal base plate and the case, thereby sealing the insulating substrate and the semiconductor element. The potting sealing agent comprises a silicone gel and a conductivity-imparting agent that is added into the gel and contains silicon atoms and ionic groups.
Inventors:
YANAURA SATOSHI (JP)
Application Number:
PCT/JP2017/041164
Publication Date:
October 04, 2018
Filing Date:
November 15, 2017
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L25/07; H01L23/24; H01L23/28; H01L23/29; H01L23/31; H01L25/18
Foreign References:
JP2017028132A | 2017-02-02 | |||
JP2015207731A | 2015-11-19 | |||
JP2007305757A | 2007-11-22 | |||
JPH10173101A | 1998-06-26 | |||
JP2015511969A | 2015-04-23 | |||
JP2013245236A | 2013-12-09 |
Attorney, Agent or Firm:
SOGA, Michiharu et al. (JP)
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