POWER SEMICONDUCTOR UNIT, POWER MODULE, PRODUCTION METHOD FOR POWER SEMICONDUCTOR UNIT AND PRODUCTION METHOD FOR POWER MODULE

WIPO Patent Application WO/2012/014843

A1

A heat radiating surface (7b, 8b) of an electrode lead frame (7, 8) is in thermal contact with a heat radiating member (301) through an insulation sheet (10) and the heat from a power semiconductor element (5) is radiated to the heat radiating member (thick walled part (301)). Either an exposed region of the heat radiating surface (7b, 8b) or the surface (13b) of a mould member (sealant (13)), which is in contact with said exposed region, protrudes and forms an irregular step. The step profile formed between the surface of the protruding side and the surface of the recessed side of the irregular step is formed with inclined surfaces (7a, 13a) in such a manner that the angle with the surface of the protruding side and the angle with the surface of the recessed side are each obtuse.

TSUYUNO, Nobutake (HITACHI LTD., 1-1, Omika-cho 7-chome, Hitachi-sh, Ibaraki 92, 〒3191292, JP)
露野　円丈 (〒92 茨城県日立市大みか町七丁目１番１号　株式会社日立製作所日立研究所内 Ibaraki, 〒3191292, JP)
HOZOJI, Hiroshi (HITACHI LTD., 1-1, Omika-cho 7-chome, Hitachi-sh, Ibaraki 92, 〒3191292, JP)
宝蔵寺　裕之 (〒92 茨城県日立市大みか町七丁目１番１号　株式会社日立製作所日立研究所内 Ibaraki, 〒3191292, JP)
ISHII, Toshiaki (HITACHI LTD., 1-1, Omika-cho 7-chome, Hitachi-sh, Ibaraki 92, 〒3191292, JP)
石井　利昭 (〒92 茨城県日立市大みか町七丁目１番１号　株式会社日立製作所日立研究所内 Ibaraki, 〒3191292, JP)
SUWA, Tokihito (Ltd. 2520 Takaba, Hitachinaka-sh, Ibaraki 03, 〒3128503, JP)

JP2011/066854

February 02, 2012

July 25, 2011

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HITACHI AUTOMOTIVE SYSTEMS, LTD. (2520, Takaba Hitachinaka-sh, Ibaraki 03, 〒3128503, JP)
日立オートモティブシステムズ株式会社 (〒03 茨城県ひたちなか市高場２５２０番地 Ibaraki, 〒3128503, JP)
TSUYUNO, Nobutake (HITACHI LTD., 1-1, Omika-cho 7-chome, Hitachi-sh, Ibaraki 92, 〒3191292, JP)
露野　円丈 (〒92 茨城県日立市大みか町七丁目１番１号　株式会社日立製作所日立研究所内 Ibaraki, 〒3191292, JP)
HOZOJI, Hiroshi (HITACHI LTD., 1-1, Omika-cho 7-chome, Hitachi-sh, Ibaraki 92, 〒3191292, JP)
宝蔵寺　裕之 (〒92 茨城県日立市大みか町七丁目１番１号　株式会社日立製作所日立研究所内 Ibaraki, 〒3191292, JP)
ISHII, Toshiaki (HITACHI LTD., 1-1, Omika-cho 7-chome, Hitachi-sh, Ibaraki 92, 〒3191292, JP)
石井　利昭 (〒92 茨城県日立市大みか町七丁目１番１号　株式会社日立製作所日立研究所内 Ibaraki, 〒3191292, JP)

H01L23/29; B60L9/18; B60L11/14; H01L23/28; H01L25/07; H01L25/18; H02M7/48; H05K7/20

NAGAI, Fuyuki (Fukoku Seimei Building 2-2-2, Uchisaiwaicho, Chiyoda-k, Tokyo 11, 〒1000011, JP)

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